IAUC100N04S6L025ATMA1 vs IAUC100N04S6L014ATMA1 Vergleich
Detaillierter Direktvergleich von IAUC100N04S6L025ATMA1 von Infineon und IAUC100N04S6L014ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC100N04S6L014ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6L014ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUC100N04S6L025ATMA1 | IAUC100N04S6L014ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,62 | $0,72 |
| Technology | OptiMOS 6 40V trench MOSFET | OptiMOS 6 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulse rating] | — |
| On-State Resistance RDS(on) max at VGS=10V | 2.5 mOhm | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Power Dissipation (PD) at TC=25C | 62 W | — |
| Betriebs-Sperrschichttemperatur | -55 C to +175 C | — |
| Gehäuse | PG-TDSON-8 (SuperSO8 5x6 mm) | PG-TDSON-8 (SuperSO8, 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| MSL-Level | 1 (per JEDEC J-STD-020) | 1 |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | IAUC / OptiMOS 6 40V |
| Transistortyp | — | N-Channel MOSFET |
| Mode | — | Enhancement |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, Tc) | — | 100 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| R_DS(on) max (V_GS=10V) | — | 1.4 mOhm |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS max rating] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical] |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: Q_G typical] |
| Power Dissipation (P_D, Tc) | — | 100 W |
| Betriebstemperaturbereich | — | -55C to +175C |
| AEC-Q101 Qualification | — | Yes |
| Packaging | — | Tape & Reel (ATMA1 suffix) |