IAUC100N04S6L025ATMA1 vs IAUC100N04S6L014ATMA1 Comparaison
Comparaison détaillée côte à côte de IAUC100N04S6L025ATMA1 par Infineon et IAUC100N04S6L014ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IAUC100N04S6L014ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6L014ATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IAUC100N04S6L025ATMA1 | IAUC100N04S6L014ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,62 | $0,72 |
| Technology | OptiMOS 6 40V trench MOSFET | OptiMOS 6 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulse rating] | — |
| On-State Resistance RDS(on) max at VGS=10V | 2.5 mOhm | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Power Dissipation (PD) at TC=25C | 62 W | — |
| Température de jonction en fonctionnement | -55 C to +175 C | — |
| Boîtier | PG-TDSON-8 (SuperSO8 5x6 mm) | PG-TDSON-8 (SuperSO8, 5x6 mm) |
| Type de montage | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| Niveau MSL | 1 (per JEDEC J-STD-020) | 1 |
| Statut RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | IAUC / OptiMOS 6 40V |
| Type de transistor | — | N-Channel MOSFET |
| Mode | — | Enhancement |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, Tc) | — | 100 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| R_DS(on) max (V_GS=10V) | — | 1.4 mOhm |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS max rating] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical] |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: Q_G typical] |
| Power Dissipation (P_D, Tc) | — | 100 W |
| Plage de température de fonctionnement | — | -55C to +175C |
| AEC-Q101 Qualification | — | Yes |
| Packaging | — | Tape & Reel (ATMA1 suffix) |