IAUC100N04S6L025ATMA1 vs IAUC100N10S5N040ATMA1 Vergleich
Detaillierter Direktvergleich von IAUC100N04S6L025ATMA1 von Infineon und IAUC100N10S5N040ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC100N10S5N040ATMA1 - 100V 4mΩ 100A OptiMOS-5 N-MOSFET | Infineon
IAUC100N10S5N040ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUC100N04S6L025ATMA1 | IAUC100N10S5N040ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,62 | $1,62 |
| Technology | OptiMOS 6 40V trench MOSFET | OptiMOS-5 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 100 V |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulse rating] | 400 A |
| On-State Resistance RDS(on) max at VGS=10V | 2.5 mOhm | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | [DATA_NEEDED: Qg value] |
| Power Dissipation (PD) at TC=25C | 62 W | — |
| Betriebs-Sperrschichttemperatur | -55 C to +175 C | — |
| Gehäuse | PG-TDSON-8 (SuperSO8 5x6 mm) | PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount |
| Montageart | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q100 qualified |
| MSL-Level | 1 (per JEDEC J-STD-020) | MSL1 (up to 260C peak reflow) |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| FET Type | — | N-Channel, Enhancement Mode |
| Continuous Drain Current (ID) @ TC=25C | — | 100 A (package-limited) |
| RDS(on) max @ VGS=10V | — | 4 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Maximum Power Dissipation (PD) | — | 167 W @ TC=25C |
| Thermal Resistance, Junction-to-Case (RthJC) | — | 0.9 K/W |
| Betriebstemperaturbereich | — | -55C to +175C (junction) |
| Avalanche Rating | — | 100% Avalanche tested |
| AOI Compatibility | — | Feasible for Automatic Optical Inspection |