IAUC100N04S6L025ATMA1 vs IAUC100N10S5N040ATMA1 对比
详细并排对比 IAUC100N04S6L025ATMA1 出自 Infineon 和 IAUC100N10S5N040ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IAUC100N10S5N040ATMA1 - 100V 4mΩ 100A OptiMOS-5 N-MOSFET | Infineon
IAUC100N10S5N040ATMA1 ✓ 量产中规格对比
| 参数 | IAUC100N04S6L025ATMA1 | IAUC100N10S5N040ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.62 | $1.62 |
| Technology | OptiMOS 6 40V trench MOSFET | OptiMOS-5 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 100 V |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulse rating] | 400 A |
| On-State Resistance RDS(on) max at VGS=10V | 2.5 mOhm | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | [DATA_NEEDED: Qg value] |
| Power Dissipation (PD) at TC=25C | 62 W | — |
| 工作结温 | -55 C to +175 C | — |
| 封装 | PG-TDSON-8 (SuperSO8 5x6 mm) | PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount |
| 安装类型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q100 qualified |
| MSL 等级 | 1 (per JEDEC J-STD-020) | MSL1 (up to 260C peak reflow) |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| FET Type | — | N-Channel, Enhancement Mode |
| Continuous Drain Current (ID) @ TC=25C | — | 100 A (package-limited) |
| RDS(on) max @ VGS=10V | — | 4 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Maximum Power Dissipation (PD) | — | 167 W @ TC=25C |
| Thermal Resistance, Junction-to-Case (RthJC) | — | 0.9 K/W |
| 工作温度范围 | — | -55C to +175C (junction) |
| Avalanche Rating | — | 100% Avalanche tested |
| AOI Compatibility | — | Feasible for Automatic Optical Inspection |