IAUC100N04S6L025ATMA1 vs IAUC120N06S5L011ATMA1 Vergleich
Detaillierter Direktvergleich von IAUC100N04S6L025ATMA1 von Infineon und IAUC120N06S5L011ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC120N06S5L011ATMA1 - 60V 1.1mOhm 310A OptiMOS 5 MOSFET | Infineon
IAUC120N06S5L011ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUC100N04S6L025ATMA1 | IAUC120N06S5L011ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,62 | $2,10 |
| Technology | OptiMOS 6 40V trench MOSFET | — |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulse rating] | — |
| On-State Resistance RDS(on) max at VGS=10V | 2.5 mOhm | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Power Dissipation (PD) at TC=25C | 62 W | — |
| Betriebs-Sperrschichttemperatur | -55 C to +175 C | -55 °C to +175 °C |
| Gehäuse | PG-TDSON-8 (SuperSO8 5x6 mm) | PG-TDSON-8-53 (TDSON-8 FL, 5 mm × 6 mm) |
| Montageart | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| MSL-Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 60 V (S5 generation) |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 60 V |
| Gate-Source Voltage (V_GS) | — | [DATA_NEEDED: max V_GS rating] |
| Continuous Drain Current (I_D) | — | 310 A (Tj), 120 A marketing |
| R_DS(on) max | — | [DATA_NEEDED: R_DS(on) at V_GS = 4.5 V] |
| Power Dissipation (P_D) | — | 188 W at T_C = 25 °C |
| Avalanche Energy Rated | — | Yes (EAS) |