IAUC100N04S6N028ATMA1 vs IAUC60N06S5L073ATMA1 Vergleich

Detaillierter Direktvergleich von IAUC100N04S6N028ATMA1 von Infineon und IAUC60N06S5L073ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IAUC100N04S6N028ATMA1 IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6N028ATMA1 ✓ Aktiv
Infineon
IAUC60N06S5L073ATMA1 IAUC60N06S5L073ATMA1 - 60V 60A OptiMOS 5 MOSFET | Infineon

IAUC60N06S5L073ATMA1 - 60V 60A OptiMOS 5 MOSFET | Infineon

IAUC60N06S5L073ATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter IAUC100N04S6N028ATMA1 IAUC60N06S5L073ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,42 $0,41
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 6 40V OptiMOS 5
FET Type N-Channel —
Technology MOSFET (Metal Oxide) Trench (OptiMOS 5)
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D) at T_C=25°C 100 A —
Pulsed Drain Current (I_DM) 400 A —
R_DS(on) max @ V_GS=10V 2.8 mΩ (typical) —
Gate Threshold Voltage (V_GS(th)) 1.5 V to 2.5 V —
Total Gate Charge (Q_g) [DATA_NEEDED: Q_g in nC] —
Power Dissipation (P_D) at T_C=25°C 62 W —
Betriebstemperaturbereich -55 °C to +175 °C -55C to +175C
Gehäuse PG-TDSON-8 (TDSON-8) PG-TDSON-8-33 (5x6 mm)
Montageart Surface Mount Surface Mount
Automotive Qualified Yes —
RoHS-Status Compliant Compliant
Transistortyp — N-Channel MOSFET
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at Tj — 60 A
On-Resistance RDS(on) max — 7.3 mΩ
Total Gate Charge (QG) — 17.4 nC
Power Dissipation (PD) at Tc — 52 W
Anzahl der Pins — 8
Configuration — Single N-Channel
Qualification — AEC-Q101 automotive grade
MSL-Level — [DATA_NEEDED: MSL level]
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) typical]
Thermal Resistance RθJA — [DATA_NEEDED: thermal resistance junction-to-ambient]

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern