IAUC60N06S5L073ATMA1 - 60V 60A OptiMOS 5 MOSFET | Infineon
Teilenummer: IAUC60N06S5L073ATMA1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $0.92 | $0,92 |
| 10 | $0.78 | $7,80 |
| 100 | $0.62 | $62,00 |
| 500 | $0.51 | $255,00 |
| 1.000 | $0.46 | $460,00 |
| 5.000 | $0.41 | $2.050,00 |
IAUC60N06S5L073ATMA1 Übersicht
A power MOSFET is a voltage-controlled semiconductor switch that turns on when the gate-to-source voltage exceeds its threshold, allowing current to flow between drain and source with very low conduction loss. The OptiMOS 5 family from Infineon represents the latest generation of low-voltage trench MOSFETs optimised for synchronous rectification, DC-DC conversion, and motor drive stages where conduction and switching losses must both be minimised. The IAUC60N06S5L073ATMA1 specifically targets the 60 V rating window, sitting between sub-40 V logic-level FETs and higher-voltage 80-100 V parts.
Key features include 7.3 mΩ typical RDS(on) at VGS=10 V, an ultra-low figure-of-merit for switching applications, and a 17.4 nC total gate charge that supports high-frequency operation with reduced driver losses. The PG-TDSON-8-33 package provides a low thermal resistance path from the silicon die to the PCB, supporting the 52 W power dissipation rating at Tc. The part is qualified for automotive and industrial applications per JEDEC standards (JESD51-5, -7 as referenced in the manufacturer datasheet), making it suitable for safety-relevant systems.
Typical applications include 48 V automotive DC-DC converters, high-current synchronous rectification stages in telecom and server power supplies, LED driver output stages, ADAS (Advanced Driver Assistance Systems) power rails, and battery management systems. The combination of low on-resistance and low gate charge is particularly advantageous in point-of-load converters and USB-PD power stages.
When designing with this MOSFET, ensure the gate driver can source/sink the required peak current (QG switching losses dominate at high frequency) and keep the switching loop area minimal to control parasitic inductance. The exposed drain pad must be soldered to a sufficient copper pour to achieve the rated power dissipation.
Drop-in-Alternativen für IAUC60N06S5L073ATMA1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit IAUC60N06S5L073ATMA1 (gleiche Bauform und Footprint) – abweichend in Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), MSL Level.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
IAUCN04S7L006ATMA1
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$1.38 / Stück
Datenblatt ansehen →IAUC80N04S6N036ATMA1
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$0.86 / Stück
Datenblatt ansehen →ISC011N06LM5ATMA1
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$0.74 / Stück
Datenblatt ansehen →BSC0911NDATMA1
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$0.46 / Stück
Datenblatt ansehen →IAUC100N08S5N043ATMA1
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$1.72 / Stück
Datenblatt ansehen →BSC034N06NSATMA1
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$0.65 / Stück
Datenblatt ansehen →IAUC60N06S5L073ATMA1 Grenzwerte & elektrische Eigenschaften
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 5 |
| Transistortyp | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at Tj | 60 A |
| On-Resistance RDS(on) max | 7.3 mΩ |
| Total Gate Charge (QG) | 17.4 nC |
| Power Dissipation (PD) at Tc | 52 W |
| Gehäuse | PG-TDSON-8-33 (5x6 mm) |
| Montageart | Surface Mount |
| Betriebstemperaturbereich | -55C to +175C |
| Technology | Trench (OptiMOS 5) |
| Anzahl der Pins | 8 |
| Configuration | Single N-Channel |
| Qualification | AEC-Q101 automotive grade |
| RoHS-Status | Compliant |
IAUC60N06S5L073ATMA1 Pin-Konfiguration
| Pin 1 | Gate — Gate control input |
| Pin 2 | Drain — Drain connection (also exposed pad) |
| Pin 3 | Source — Source connection |
| Pin 4 | Source — Source connection (Kelvin) |
| Pin 5 | Source — Source connection |
| Pin 6 | Source — Source connection |
| Pin 7 | Source — Source connection |
| Pin 8 | Source — Source connection |
Sicherer Arbeitsbereich (DC)
Typische Anwendungen
IAUC60N06S5L073ATMA1 ist geeignet für 6 Anwendungs: 48V Automotive DC-DC Converter, ADAS Power Supply, LED Driver Output Stage, Telecom Brick Converter, Server VR Stage, Industrial Motor Drive.
48V Automotive DC-DC Converter
The IAUC60N06S5L073ATMA1 is ideally suited as both the high-side and low-side switch in 48 V automotive DC-DC converters, including mild-hybrid (MHEV) systems and 48 V point-of-load rails. Its 60 V VDS rating provides comfortable margin above the 48 V nominal bus (which can transient to 54 V during load dump), while the 7.3 mΩ RDS(on) minimises conduction loss in continuous-current operation. The 17.4 nC QG keeps switching losses manageable at 100-200 kHz switching frequencies typical in 48 V buck/boost stages. AEC-Q101 qualification ensures reliability in under-hood environments where ambient temperatures regularly exceed 85 C.
Empfohlen
ADAS Power Supply
Advanced Driver Assistance Systems (ADAS) require clean, low-noise power rails for radar, camera, and lidar modules. The IAUC60N06S5L073ATMA1 in a synchronous buck topology delivers the high-current efficiency required to power multiple ADAS sensor rails from the 12 V or 48 V automotive bus. Its AEC-Q101 qualification, low RDS(on), and small PG-TDSON-8-33 footprint allow designers to place the converter physically close to the sensor module, reducing distribution losses. The part's 60 V VDS also protects against load-dump transients on the 12 V bus that can briefly spike beyond 40 V.
Empfohlen
LED Driver Output Stage
High-brightness LED drivers for automotive headlamps and industrial lighting benefit from the IAUC60N06S5L073ATMA1's low conduction loss and high switching capability. In buck and boost LED driver topologies, the FET switches at 100-500 kHz to keep inductor size small while delivering multi-amp currents to LED strings. The 7.3 mΩ RDS(on) keeps the FET cool even at continuous 10-15 A LED current, eliminating the need for bulky heatsinks in compact headlamp assemblies. The PG-TDSON-8-33 package's exposed pad enables direct PCB cooling via copper pour.
Empfohlen
Telecom Brick Converter
Isolated DC-DC bricks for telecom and networking equipment (typically 48 V input to 12 V, 5 V, or 3.3 V output) commonly use the IAUC60N06S5L073ATMA1 as the primary-side synchronous rectifier switch. Its 60 V rating exceeds the 48 V nominal bus plus transient margin, while the low QG supports 200-500 kHz switching frequencies that shrink magnetic component size. The part's high current capability (60 A) allows a single FET to handle 500-1000 W brick converter power levels, simplifying the primary-side design and reducing BOM cost.
Empfohlen
Server VR Stage
Server voltage regulator (VR) stages that convert 48 V bus to core voltages for CPUs, GPUs, and ASICs benefit from the IAUC60N06S5L073ATMA1's high-current capability and low figure-of-merit. In multi-phase buck topologies, each phase can use a single IAUC60N06S5L073ATMA1 for the high-side switch, with the low-side implemented by a similar OptiMOS 5 part. The 17.4 nC QG enables switching frequencies of 300-500 kHz per phase, allowing high power density. AEC-Q101 qualification provides reliability margin for 24/7 server operation.
Empfohlen
Industrial Motor Drive
Industrial motor drives, robotics, and factory automation equipment use the IAUC60N06S5L073ATMA1 in 3-phase inverter bridges driving brushless DC (BLDC) and permanent magnet synchronous motors (PMSM). With a 60 V rating, the FET is well-matched to 24-48 V DC bus systems powering low-voltage servo motors and small industrial drives. The 60 A continuous current rating supports motors up to several kilowatts. The PG-TDSON-8-33 surface-mount package allows automated assembly and compact PCB layouts in space-constrained motor control boards.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für IAUC60N06S5L073ATMA1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | IAUCN04S7L006ATMA1 | IAUC80N04S6N036ATMA1 | ISC011N06LM5ATMA1 | BSC0911NDATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same |
| VDS (max) | 60 V | 40 V | 40 V | 60 V | 60 V |
| RDS(on) max | 7.3 mΩ | 6 mΩ | 3.6 mΩ | 1.1 mΩ | 9.1 mΩ |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Automotive Qualified | Yes (AEC-Q101) | Yes | Yes | Yes | Yes |
Wichtigste Unterscheidungsmerkmale
- Lowest RDS(on) x QG figure-of-merit in OptiMOS 5 60 V family (vs. BSC0911NDATMA1)
- Automotive AEC-Q101 qualified in the same TDSON-8 footprint (vs. IAUC100N08S5N043ATMA1)
- Higher current rating than lower-voltage OptiMOS variants (vs. IAUCN04S7L006ATMA1)
Designhinweise
At continuous 60 A drain current, conduction loss alone is I^2 x RDS(on) = 60^2 x 0.0073 = ~26 W. With PG-TDSON-8-33 mounted on 1 sq inch of 2 oz copper, expected thermal resistance RθJA is approximately 50 C/W, giving 1300 C junction temperature rise above ambient - well above the 175 C limit. Estimated: for sustained 60 A operation, forced air cooling or larger copper area is mandatory. Practical continuous current at 25 C ambient is closer to 30-40 A.
Minimise the high-side/low-side switching loop area between drain and source to control parasitic inductance. The exposed drain pad must be soldered to a continuous copper pour that covers at least 1 sq inch of board area on the top layer, plus thermal vias to inner copper planes. Keep the gate drive loop separate from the power loop to avoid dv/dt-induced gate ringing. Use wide copper traces for source connection to reduce parasitic source inductance.
Do not exceed the 60 V VDS rating during switching transients - inductive kickback from the FET's own parasitics can overshoot the rail voltage by 20-30%. Add a TVS clamp or snubber if the switching node has high di/dt. Also, gate-source voltage must stay within +/-20 V; below -20 V the gate oxide can rupture. Use a gate-source resistor of 10-100 kΩ to hold the FET off during controller power-up.
Compliance-Informationen
AEC-Q101 automotive qualified per Infineon IAUC naming convention. RoHS compliant per distributor listings.
