IAUC100N04S6N028ATMA1 vs IAUZ30N08S5N186ATMA1 Vergleich

Detaillierter Direktvergleich von IAUC100N04S6N028ATMA1 von Infineon und IAUZ30N08S5N186ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IAUC100N04S6N028ATMA1 IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6N028ATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter IAUC100N04S6N028ATMA1 IAUZ30N08S5N186ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,42 $0,48
Manufacturer Infineon Technologies —
Series OptiMOS 6 40V —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) OptiMOS 5 N-Channel Power MOSFET (trench)
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D) at T_C=25°C 100 A —
Pulsed Drain Current (I_DM) 400 A —
R_DS(on) max @ V_GS=10V 2.8 mΩ (typical) —
Gate Threshold Voltage (V_GS(th)) 1.5 V to 2.5 V —
Total Gate Charge (Q_g) [DATA_NEEDED: Q_g in nC] —
Power Dissipation (P_D) at T_C=25°C 62 W —
Betriebstemperaturbereich -55 °C to +175 °C -55 °C to +175 °C (automotive)
Gehäuse PG-TDSON-8 (TDSON-8) PG-TSDSON-8-32 (5x6 mm)
Montageart Surface Mount Surface Mount
Automotive Qualified Yes —
RoHS-Status Compliant Compliant
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID, Tj) — 30 A
Power Dissipation (PD, Tc) — 41 W
On-State Resistance (RDS(on)) — 18.6 mΩ (typical, VGS = 10 V)
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg at VGS=10V]
Automotive Qualification — AEC-Q101 qualified
MSL-Level — [DATA_NEEDED: MSL rating]
Lead-Free / Halogen-Free — Yes / [DATA_NEEDED: halogen-free status]

Datenblätter & Ressourcen

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