IAUC100N04S6N028ATMA1 vs IAUZ30N08S5N186ATMA1 비교
다음의 상세 나란히 비교: IAUC100N04S6N028ATMA1 제조: Infineon 및 IAUZ30N08S5N186ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IAUC100N04S6N028ATMA1 | IAUZ30N08S5N186ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.42 | $0.48 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 6 40V | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | OptiMOS 5 N-Channel Power MOSFET (trench) |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D) at T_C=25°C | 100 A | — |
| Pulsed Drain Current (I_DM) | 400 A | — |
| R_DS(on) max @ V_GS=10V | 2.8 mΩ (typical) | — |
| Gate Threshold Voltage (V_GS(th)) | 1.5 V to 2.5 V | — |
| Total Gate Charge (Q_g) | [DATA_NEEDED: Q_g in nC] | — |
| Power Dissipation (P_D) at T_C=25°C | 62 W | — |
| 동작 온도 범위 | -55 °C to +175 °C | -55 °C to +175 °C (automotive) |
| 패키지 | PG-TDSON-8 (TDSON-8) | PG-TSDSON-8-32 (5x6 mm) |
| 실장 유형 | Surface Mount | Surface Mount |
| Automotive Qualified | Yes | — |
| RoHS 상태 | Compliant | Compliant |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID, Tj) | — | 30 A |
| Power Dissipation (PD, Tc) | — | 41 W |
| On-State Resistance (RDS(on)) | — | 18.6 mΩ (typical, VGS = 10 V) |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg at VGS=10V] |
| Automotive Qualification | — | AEC-Q101 qualified |
| MSL 레벨 | — | [DATA_NEEDED: MSL rating] |
| Lead-Free / Halogen-Free | — | Yes / [DATA_NEEDED: halogen-free status] |