IAUC100N10S5L054ATMA1 vs ISC037N12NM6ATMA1 Vergleich
Detaillierter Direktvergleich von IAUC100N10S5L054ATMA1 von Infineon und ISC037N12NM6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IAUC100N10S5L054ATMA1 | ISC037N12NM6ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,92 | $3,62 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 (IAUC automotive family) | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-to-Source Voltage (V_DS) | 100 V | — |
| Gate-to-Source Voltage (V_GS) | [DATA_NEEDED: max V_GS value] | — |
| Continuous Drain Current (I_D, Tj) | 101 A | — |
| Power Dissipation (P_D, Tc) | 130 W | — |
| R_DS(on) max at V_GS=10V | 5.4 mΩ | — |
| Betriebstemperaturbereich | -55°C to +175°C | -55C to +175C (junction) |
| Gehäuse | PG-TDSON-8-34 (surface mount) | PG-TDSON-8 FL (SuperSO8) |
| Montageart | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (automotive) | — |
| Technology | OptiMOS 5 trench | OptiMOS 6 (N-channel trench MOSFET) |
| MSL-Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| RoHS-Status | Compliant | Compliant |
| Drain-Source Voltage (Vds) | — | 120 V |
| Continuous Drain Current (Id) at Ta=25C | — | 19.2 A |
| Pulsed Drain Current (Idm) at Tc | — | 163 A |
| On-Resistance Rds(on) typ at Vgs=10V | — | 3.7 mOhm |
| Power Dissipation at Ta | — | 3 W |
| Power Dissipation at Tc | — | 214 W |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) value] |
| Gate Charge (Qg) typ | — | [DATA_NEEDED: Qg total] |
| Avalanche Energy Rated | — | Yes (single-pulse) |