IAUC100N10S5L054ATMA1 vs ISC037N12NM6ATMA1 Comparison

Detailed side-by-side comparison of IAUC100N10S5L054ATMA1 by Infineon and ISC037N12NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUC100N10S5L054ATMA1

IAUC100N10S5L054ATMA1 - 100V 5.4mΞ© N-Ch MOSFET | Infineon

IAUC100N10S5L054ATMA1 βœ“ Active
Infineon
ISC037N12NM6ATMA1 ISC037N12NM6ATMA1 - 120V 3.7mOhm N-Channel OptiMOS 6 | Infineon

ISC037N12NM6ATMA1 - 120V 3.7mOhm N-Channel OptiMOS 6 | Infineon

ISC037N12NM6ATMA1 βœ“ Active

Specification Comparison

Parameter IAUC100N10S5L054ATMA1 ISC037N12NM6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.92 $3.62
Manufacturer Infineon Technologies β€”
Series OptiMOS 5 (IAUC automotive family) β€”
Transistor Type N-Channel MOSFET β€”
Drain-to-Source Voltage (V_DS) 100 V β€”
Gate-to-Source Voltage (V_GS) [DATA_NEEDED: max V_GS value] β€”
Continuous Drain Current (I_D, Tj) 101 A β€”
Power Dissipation (P_D, Tc) 130 W β€”
R_DS(on) max at V_GS=10V 5.4 mΞ© β€”
Operating Temperature Range -55Β°C to +175Β°C -55C to +175C (junction)
Package PG-TDSON-8-34 (surface mount) PG-TDSON-8 FL (SuperSO8)
Mounting Type Surface Mount Surface Mount
Qualification AEC-Q101 (automotive) β€”
Technology OptiMOS 5 trench OptiMOS 6 (N-channel trench MOSFET)
MSL Level [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
RoHS Status Compliant Compliant
Drain-Source Voltage (Vds) β€” 120 V
Continuous Drain Current (Id) at Ta=25C β€” 19.2 A
Pulsed Drain Current (Idm) at Tc β€” 163 A
On-Resistance Rds(on) typ at Vgs=10V β€” 3.7 mOhm
Power Dissipation at Ta β€” 3 W
Power Dissipation at Tc β€” 214 W
Gate Threshold Voltage (Vgs(th)) β€” [DATA_NEEDED: Vgs(th) value]
Gate Charge (Qg) typ β€” [DATA_NEEDED: Qg total]
Avalanche Energy Rated β€” Yes (single-pulse)

Datasheets & Resources

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