IAUC100N10S5N040ATMA1 vs IAUC100N04S6L025ATMA1 Vergleich
Detaillierter Direktvergleich von IAUC100N10S5N040ATMA1 von Infineon und IAUC100N04S6L025ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC100N10S5N040ATMA1 - 100V 4mΩ 100A OptiMOS-5 N-MOSFET | Infineon
IAUC100N10S5N040ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUC100N10S5N040ATMA1 | IAUC100N04S6L025ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,62 | $0,62 |
| FET Type | N-Channel, Enhancement Mode | — |
| Technology | OptiMOS-5 | OptiMOS 6 40V trench MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 40 V |
| Continuous Drain Current (ID) @ TC=25C | 100 A (package-limited) | — |
| Pulsed Drain Current (IDM) | 400 A | [DATA_NEEDED: IDM pulse rating] |
| RDS(on) max @ VGS=10V | 4 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | [DATA_NEEDED: Qg total] |
| Maximum Power Dissipation (PD) | 167 W @ TC=25C | — |
| Thermal Resistance, Junction-to-Case (RthJC) | 0.9 K/W | — |
| Betriebstemperaturbereich | -55C to +175C (junction) | — |
| Gehäuse | PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount | PG-TDSON-8 (SuperSO8 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | MSL1 (up to 260C peak reflow) | 1 (per JEDEC J-STD-020) |
| Automotive Qualification | AEC-Q100 qualified | AEC-Q101 qualified |
| Avalanche Rating | 100% Avalanche tested | — |
| AOI Compatibility | Feasible for Automatic Optical Inspection | — |
| RoHS-Status | Compliant | Compliant |
| Polarity | — | N-Channel |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| On-State Resistance RDS(on) max at VGS=10V | — | 2.5 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Power Dissipation (PD) at TC=25C | — | 62 W |
| Betriebs-Sperrschichttemperatur | — | -55 C to +175 C |
| Lead-Free | — | Yes |