IAUC100N10S5N040ATMA1 vs IAUC100N04S6L025ATMA1 Сравнение
Подробное сравнение бок о бок IAUC100N10S5N040ATMA1 от Infineon и IAUC100N04S6L025ATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IAUC100N10S5N040ATMA1 - 100V 4mΩ 100A OptiMOS-5 N-MOSFET | Infineon
IAUC100N10S5N040ATMA1 ✓ АктивенInfineon
IAUC100N04S6L025ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon
IAUC100N04S6L025ATMA1 ✓ АктивенСравнение характеристик
| Параметр | IAUC100N10S5N040ATMA1 | IAUC100N04S6L025ATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,62 | $0,62 |
| FET Type | N-Channel, Enhancement Mode | — |
| Technology | OptiMOS-5 | OptiMOS 6 40V trench MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 40 V |
| Continuous Drain Current (ID) @ TC=25C | 100 A (package-limited) | — |
| Pulsed Drain Current (IDM) | 400 A | [DATA_NEEDED: IDM pulse rating] |
| RDS(on) max @ VGS=10V | 4 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | [DATA_NEEDED: Qg total] |
| Maximum Power Dissipation (PD) | 167 W @ TC=25C | — |
| Thermal Resistance, Junction-to-Case (RthJC) | 0.9 K/W | — |
| Диапазон рабочих температур | -55C to +175C (junction) | — |
| Корпус | PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount | PG-TDSON-8 (SuperSO8 5x6 mm) |
| Тип монтажа | Surface Mount | Surface Mount |
| Уровень MSL | MSL1 (up to 260C peak reflow) | 1 (per JEDEC J-STD-020) |
| Automotive Qualification | AEC-Q100 qualified | AEC-Q101 qualified |
| Avalanche Rating | 100% Avalanche tested | — |
| AOI Compatibility | Feasible for Automatic Optical Inspection | — |
| Статус RoHS | Compliant | Compliant |
| Polarity | — | N-Channel |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| On-State Resistance RDS(on) max at VGS=10V | — | 2.5 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Power Dissipation (PD) at TC=25C | — | 62 W |
| Рабочая температура перехода | — | -55 C to +175 C |
| Lead-Free | — | Yes |