IAUC100N10S5N040ATMA1 vs IAUC60N04S6N031HATMA1 Vergleich
Detaillierter Direktvergleich von IAUC100N10S5N040ATMA1 von Infineon und IAUC60N04S6N031HATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC100N10S5N040ATMA1 - 100V 4mΩ 100A OptiMOS-5 N-MOSFET | Infineon
IAUC100N10S5N040ATMA1 ✓ AktivInfineon
IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon
IAUC60N04S6N031HATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUC100N10S5N040ATMA1 | IAUC60N04S6N031HATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,62 | $0,95 |
| FET Type | N-Channel, Enhancement Mode | — |
| Technology | OptiMOS-5 | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) @ TC=25C | 100 A (package-limited) | — |
| Pulsed Drain Current (IDM) | 400 A | — |
| RDS(on) max @ VGS=10V | 4 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Maximum Power Dissipation (PD) | 167 W @ TC=25C | — |
| Thermal Resistance, Junction-to-Case (RthJC) | 0.9 K/W | — |
| Betriebstemperaturbereich | -55C to +175C (junction) | -55 °C to +175 °C (Tj) |
| Gehäuse | PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount | PG-TDSON-8-56 (5 mm x 6 mm) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | MSL1 (up to 260C peak reflow) | [DATA_NEEDED: MSL rating] |
| Automotive Qualification | AEC-Q100 qualified | AEC-Q101 |
| Avalanche Rating | 100% Avalanche tested | — |
| AOI Compatibility | Feasible for Automatic Optical Inspection | — |
| RoHS-Status | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | IAUC (Integrated Automotive Half-Bridge) |
| Process Technology | — | OptiMOS 6 40V |
| Configuration | — | Half-Bridge (2 N-Channel MOSFETs) |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, Tj) | — | 60 A |
| Power Dissipation (P_D, Tc=25C) | — | 75 W |
| R_DS(on) at VGS=10V | — | 3.1 mΩ |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS max rating] |
| Pin-Anzahl | — | 8 |