IAUC100N10S5N040ATMA1 vs IAUC60N04S6N031HATMA1 비교
다음의 상세 나란히 비교: IAUC100N10S5N040ATMA1 제조: Infineon 및 IAUC60N04S6N031HATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
IAUC100N10S5N040ATMA1 - 100V 4mΩ 100A OptiMOS-5 N-MOSFET | Infineon
IAUC100N10S5N040ATMA1 ✓ 활성
사양 비교
| 파라미터 | IAUC100N10S5N040ATMA1 | IAUC60N04S6N031HATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.62 | $0.95 |
| FET Type | N-Channel, Enhancement Mode | — |
| Technology | OptiMOS-5 | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) @ TC=25C | 100 A (package-limited) | — |
| Pulsed Drain Current (IDM) | 400 A | — |
| RDS(on) max @ VGS=10V | 4 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Maximum Power Dissipation (PD) | 167 W @ TC=25C | — |
| Thermal Resistance, Junction-to-Case (RthJC) | 0.9 K/W | — |
| 동작 온도 범위 | -55C to +175C (junction) | -55 °C to +175 °C (Tj) |
| 패키지 | PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount | PG-TDSON-8-56 (5 mm x 6 mm) |
| 실장 유형 | Surface Mount | Surface Mount |
| MSL 레벨 | MSL1 (up to 260C peak reflow) | [DATA_NEEDED: MSL rating] |
| Automotive Qualification | AEC-Q100 qualified | AEC-Q101 |
| Avalanche Rating | 100% Avalanche tested | — |
| AOI Compatibility | Feasible for Automatic Optical Inspection | — |
| RoHS 상태 | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | IAUC (Integrated Automotive Half-Bridge) |
| Process Technology | — | OptiMOS 6 40V |
| Configuration | — | Half-Bridge (2 N-Channel MOSFETs) |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, Tj) | — | 60 A |
| Power Dissipation (P_D, Tc=25C) | — | 75 W |
| R_DS(on) at VGS=10V | — | 3.1 mΩ |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS max rating] |
| 핀 수 | — | 8 |