IAUC100N10S5N040ATMA1 vs IAUCN04S7N012ATMA1 Vergleich
Detaillierter Direktvergleich von IAUC100N10S5N040ATMA1 von Infineon und IAUCN04S7N012ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC100N10S5N040ATMA1 - 100V 4mΩ 100A OptiMOS-5 N-MOSFET | Infineon
IAUC100N10S5N040ATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IAUC100N10S5N040ATMA1 | IAUCN04S7N012ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,62 | $1,18 |
| FET Type | N-Channel, Enhancement Mode | — |
| Technology | OptiMOS-5 | OptiMOS-7 (trench) |
| Drain-Source Voltage (VDS) | 100 V | 40 V |
| Continuous Drain Current (ID) @ TC=25C | 100 A (package-limited) | — |
| Pulsed Drain Current (IDM) | 400 A | — |
| RDS(on) max @ VGS=10V | 4 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | [DATA_NEEDED: Qg typical] |
| Maximum Power Dissipation (PD) | 167 W @ TC=25C | — |
| Thermal Resistance, Junction-to-Case (RthJC) | 0.9 K/W | — |
| Betriebstemperaturbereich | -55C to +175C (junction) | -55 °C to +175 °C [DATA_NEEDED: junction temperature max from datasheet] |
| Gehäuse | PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount | PG-TDSON-8-34 (8-PowerTDFN) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | MSL1 (up to 260C peak reflow) | 1 |
| Automotive Qualification | AEC-Q100 qualified | — |
| Avalanche Rating | 100% Avalanche tested | — |
| AOI Compatibility | Feasible for Automatic Optical Inspection | — |
| RoHS-Status | Compliant | Compliant |
| Transistortyp | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A |
| On-State Resistance RDS(on) max at VGS=10V | — | 1.2 mΩ |
| On-State Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS absolute max] |
| Transistor Grade | — | Automotive (AEC-Q101) |
| Verlustleistung (Ptot) | — | [DATA_NEEDED: Ptot at TC=25°C] |
| Thermal Resistance RθJA | — | [DATA_NEEDED: RθJA on JEDEC PCB] |
| Halogenfrei | — | Yes |
| Polarity | — | N-Channel |