IAUC100N10S5N040ATMA1 vs IAUCN04S7N012ATMA1 Comparação
Comparação detalhada lado a lado de IAUC100N10S5N040ATMA1 por Infineon e IAUCN04S7N012ATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IAUC100N10S5N040ATMA1 - 100V 4mΩ 100A OptiMOS-5 N-MOSFET | Infineon
IAUC100N10S5N040ATMA1 ✓ Ativo
Comparação de especificações
| Parâmetro | IAUC100N10S5N040ATMA1 | IAUCN04S7N012ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $1,62 | $1,18 |
| FET Type | N-Channel, Enhancement Mode | — |
| Technology | OptiMOS-5 | OptiMOS-7 (trench) |
| Drain-Source Voltage (VDS) | 100 V | 40 V |
| Continuous Drain Current (ID) @ TC=25C | 100 A (package-limited) | — |
| Pulsed Drain Current (IDM) | 400 A | — |
| RDS(on) max @ VGS=10V | 4 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | [DATA_NEEDED: Qg typical] |
| Maximum Power Dissipation (PD) | 167 W @ TC=25C | — |
| Thermal Resistance, Junction-to-Case (RthJC) | 0.9 K/W | — |
| Faixa de temperatura de operação | -55C to +175C (junction) | -55 °C to +175 °C [DATA_NEEDED: junction temperature max from datasheet] |
| Encapsulamento | PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount | PG-TDSON-8-34 (8-PowerTDFN) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Nível MSL | MSL1 (up to 260C peak reflow) | 1 |
| Automotive Qualification | AEC-Q100 qualified | — |
| Avalanche Rating | 100% Avalanche tested | — |
| AOI Compatibility | Feasible for Automatic Optical Inspection | — |
| Status RoHS | Compliant | Compliant |
| Tipo de transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A |
| On-State Resistance RDS(on) max at VGS=10V | — | 1.2 mΩ |
| On-State Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS absolute max] |
| Transistor Grade | — | Automotive (AEC-Q101) |
| Dissipação de potência (Ptot) | — | [DATA_NEEDED: Ptot at TC=25°C] |
| Thermal Resistance RθJA | — | [DATA_NEEDED: RθJA on JEDEC PCB] |
| Livre de halogênio | — | Yes |
| Polarity | — | N-Channel |