IAUC120N04S6N009ATMA1 vs IAUC120N04S6L009ATMA1 Vergleich
Detaillierter Direktvergleich von IAUC120N04S6N009ATMA1 von Infineon und IAUC120N04S6L009ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΩ OptiMOS 6 MOSFET | Infineon
IAUC120N04S6N009ATMA1 ✓ AktivInfineon
IAUC120N04S6L009ATMA1 - 40V 0.9mΩ 120A OptiMOS-6 MOSFET | Infineon
IAUC120N04S6L009ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUC120N04S6N009ATMA1 | IAUC120N04S6L009ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,60 | $1,65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 40V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DSS) | 40 V | — |
| Continuous Drain Current (I_D, Tc) | 120 A | — |
| Gepulster Drain-Strom | [DATA_NEEDED: pulsed I_D value] | — |
| R_DS(on) max @ V_GS=10V | 0.9 mΩ | — |
| Gate Threshold Voltage V_GS(th) typ | [DATA_NEEDED: V_GS(th) typical value] | — |
| Total Gate Charge Q_g typ | [DATA_NEEDED: Q_g typical] | — |
| Power Dissipation (Tc) | 150 W | — |
| Thermal Resistance R_thJC max | 1.0 K/W | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C | -55 °C to +175 °C |
| Gehäuse | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8-34 (5x6 mm leadless, SS08) |
| Montageart | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | — |
| MSL-Level | 1 | [DATA_NEEDED: MSL rating] |
| RoHS | Compliant | — |
| Lead-Free / Halogen-Free | Yes (per Infineon product page) | — |
| Product Family | — | OptiMOS-6 40V |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 40 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | — | 150 A (per datasheet header) |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=100°C) | — | [DATA_NEEDED: I_D at TC=100C] |
| Pulsed Drain Current (I<sub>DM</sub>) | — | [DATA_NEEDED: pulsed I_DM] |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | — | 0.9 mΩ |
| R<sub>DS(on)</sub> @ V<sub>GS</sub>=4.5 V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate-Source Threshold Voltage V<sub>GS(th)</sub> | — | [DATA_NEEDED: VGS(th) typ/range] |
| Gate Charge Q<sub>g</sub> | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation P<sub>D</sub> (T<sub>C</sub>=25°C) | — | 150 W |
| Pin-Anzahl | — | 8 |
| AEC-Q101 Automotive Qualification | — | Yes |
| RoHS-Status | — | Compliant |
| Avalanche Energy E<sub>AS</sub> | — | [DATA_NEEDED: single-pulse avalanche energy] |