IAUC120N04S6N009ATMA1 vs IAUC120N04S6L009ATMA1 Сравнение
Подробное сравнение бок о бок IAUC120N04S6N009ATMA1 от Infineon и IAUC120N04S6L009ATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΩ OptiMOS 6 MOSFET | Infineon
IAUC120N04S6N009ATMA1 ✓ АктивенInfineon
IAUC120N04S6L009ATMA1 - 40V 0.9mΩ 120A OptiMOS-6 MOSFET | Infineon
IAUC120N04S6L009ATMA1 ✓ АктивенСравнение характеристик
| Параметр | IAUC120N04S6N009ATMA1 | IAUC120N04S6L009ATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,60 | $1,65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 40V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DSS) | 40 V | — |
| Continuous Drain Current (I_D, Tc) | 120 A | — |
| Импульсный ток стока | [DATA_NEEDED: pulsed I_D value] | — |
| R_DS(on) max @ V_GS=10V | 0.9 mΩ | — |
| Gate Threshold Voltage V_GS(th) typ | [DATA_NEEDED: V_GS(th) typical value] | — |
| Total Gate Charge Q_g typ | [DATA_NEEDED: Q_g typical] | — |
| Power Dissipation (Tc) | 150 W | — |
| Thermal Resistance R_thJC max | 1.0 K/W | — |
| Рабочая температура перехода | -55 °C to +175 °C | -55 °C to +175 °C |
| Корпус | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8-34 (5x6 mm leadless, SS08) |
| Тип монтажа | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | — |
| Уровень MSL | 1 | [DATA_NEEDED: MSL rating] |
| RoHS | Compliant | — |
| Lead-Free / Halogen-Free | Yes (per Infineon product page) | — |
| Product Family | — | OptiMOS-6 40V |
| Тип транзистора | — | N-Channel MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 40 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | — | 150 A (per datasheet header) |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=100°C) | — | [DATA_NEEDED: I_D at TC=100C] |
| Pulsed Drain Current (I<sub>DM</sub>) | — | [DATA_NEEDED: pulsed I_DM] |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | — | 0.9 mΩ |
| R<sub>DS(on)</sub> @ V<sub>GS</sub>=4.5 V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate-Source Threshold Voltage V<sub>GS(th)</sub> | — | [DATA_NEEDED: VGS(th) typ/range] |
| Gate Charge Q<sub>g</sub> | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation P<sub>D</sub> (T<sub>C</sub>=25°C) | — | 150 W |
| Число выводов | — | 8 |
| AEC-Q101 Automotive Qualification | — | Yes |
| Статус RoHS | — | Compliant |
| Avalanche Energy E<sub>AS</sub> | — | [DATA_NEEDED: single-pulse avalanche energy] |