IAUC120N04S6N010ATMA1 vs IAUC120N06S5N022ATMA1 Vergleich

Detaillierter Direktvergleich von IAUC120N04S6N010ATMA1 von Infineon und IAUC120N06S5N022ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IAUC120N04S6N010ATMA1 IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon

IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon

IAUC120N04S6N010ATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter IAUC120N04S6N010ATMA1 IAUC120N06S5N022ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,68 $1,68
FET Type N-Channel —
Drain-Source Voltage (V(BR)DSS) 40 V —
Continuous Drain Current (Id, Tc) 150 A —
Power Dissipation (Pd, Tc) 150 W —
RDS(on) at VGS=10V (typ) 1.0 mΩ —
RDS(on) at VGS=10V (max per LCSC excerpt) 1.03 mΩ —
Gate-Source Threshold (VGS(th), typ) 3 V (at 90 µA) —
Technology OptiMOS 6 OptiMOS-5 trench
Gehäuse PG-TDSON-8-34 (5x6 mm leadless) PG-TDSON-8-34 (TDSON EP 5x6)
Montageart Surface Mount Surface Mount
Automotive Qualification AEC-Q101 AEC-Q101
Betriebstemperaturbereich -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family) [DATA_NEEDED: TJ min/max]
MSL-Level 1 (per JEDEC J-STD-020, per Infineon TDSON family) —
RoHS-Status Compliant Compliant
Gate Drive Recommendation 10 V VGS for full RDS(on) spec —
Polarity Single N-channel —
Drain-Source Voltage (VDS) — 60 V
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) — 170 A (Tj)
On-Resistance RDS(on) max — 2.2 mΩ at VGS=10 V
Power Dissipation (PD) — 136 W (Tc)
Channel Type — N-Channel
Pin-Anzahl — 8 (with exposed pad)
Halogenfrei — Yes (per Infineon product family convention)
Total Gate Charge (Qg) — [DATA_NEEDED: typical Qg]
RDS(on) at VGS=4.5V — [DATA_NEEDED: RDS(on) @4.5V]

Datenblätter & Ressourcen

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