IAUC120N04S6N010ATMA1 vs IAUC120N06S5N022ATMA1 对比

详细并排对比 IAUC120N04S6N010ATMA1 出自 Infineon 和 IAUC120N06S5N022ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC120N04S6N010ATMA1 IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon

IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon

IAUC120N04S6N010ATMA1 ✓ 量产中
Infineon
IAUC120N06S5N022ATMA1 IAUC120N06S5N022ATMA1 - 60V, 2.2mΩ OptiMOS-5 N-MOSFET | Infineon

IAUC120N06S5N022ATMA1 - 60V, 2.2mΩ OptiMOS-5 N-MOSFET | Infineon

IAUC120N06S5N022ATMA1 ✓ 量产中

规格对比

参数 IAUC120N04S6N010ATMA1 IAUC120N06S5N022ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.68 $1.68
FET Type N-Channel —
Drain-Source Voltage (V(BR)DSS) 40 V —
Continuous Drain Current (Id, Tc) 150 A —
Power Dissipation (Pd, Tc) 150 W —
RDS(on) at VGS=10V (typ) 1.0 mΩ —
RDS(on) at VGS=10V (max per LCSC excerpt) 1.03 mΩ —
Gate-Source Threshold (VGS(th), typ) 3 V (at 90 µA) —
Technology OptiMOS 6 OptiMOS-5 trench
封装 PG-TDSON-8-34 (5x6 mm leadless) PG-TDSON-8-34 (TDSON EP 5x6)
安装类型 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 AEC-Q101
工作温度范围 -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family) [DATA_NEEDED: TJ min/max]
MSL 等级 1 (per JEDEC J-STD-020, per Infineon TDSON family) —
RoHS 状态 Compliant Compliant
Gate Drive Recommendation 10 V VGS for full RDS(on) spec —
Polarity Single N-channel —
Drain-Source Voltage (VDS) — 60 V
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) — 170 A (Tj)
On-Resistance RDS(on) max — 2.2 mΩ at VGS=10 V
Power Dissipation (PD) — 136 W (Tc)
Channel Type — N-Channel
引脚数量 — 8 (with exposed pad)
无卤 — Yes (per Infineon product family convention)
Total Gate Charge (Qg) — [DATA_NEEDED: typical Qg]
RDS(on) at VGS=4.5V — [DATA_NEEDED: RDS(on) @4.5V]

数据手册与资源

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