IAUC120N06S5L032ATMA1 vs IPD090N03LGATMA1 Vergleich

Detaillierter Direktvergleich von IAUC120N06S5L032ATMA1 von Infineon und IPD090N03LGATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IAUC120N06S5L032ATMA1 IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L032ATMA1 ✓ Aktiv
Infineon
IPD090N03LGATMA1 IPD090N03LGATMA1 - 30V 40A OptiMOS N-Ch MOSFET | Infineon

IPD090N03LGATMA1 - 30V 40A OptiMOS N-Ch MOSFET | Infineon

IPD090N03LGATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter IAUC120N06S5L032ATMA1 IPD090N03LGATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,82 $0,34
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 (60 V) —
Transistortyp N-Channel, Enhancement Mode —
Drain-to-Source Voltage (V_DS) 60 V —
Continuous Drain Current (I_D, T_j) 120 A —
R_DS(on) Max (V_GS = 10 V) 3.2 mOhm —
Power Dissipation (P_D, T_C = 25 C) 94 W —
Gehäuse PG-TDSON-8-34 (5x6 mm) PG-TO252-3-11 (DPAK)
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich -55 C to +175 C (T_j) -55C to +175C (junction)
Technology OptiMOS 5 Trench —
AEC-Q101 Qualified Yes —
RoHS-Status Compliant Compliant
MSL-Level [DATA_NEEDED: MSL rating] 1 (unlimited)
Gate Threshold Voltage V_GS(th) [DATA_NEEDED: V_GS(th) typical and min/max] —
Total Gate Charge Q_G [DATA_NEEDED: Q_G total at V_GS=10V] —
FET Type — N-Channel
Drain-Source Voltage (Vdss) — 30 V
Continuous Drain Current (Id) @ Tc=25C — 40 A
Continuous Drain Current (Id) @ Tc=100C — [DATA_NEEDED: Id at 100C]
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed Id]
Maximum Power Dissipation (Pd) @ Tc=25C — 42 W
On-State Resistance (Rds(on)) @ Vgs=10V, Id=30A — 9 mOhm (typical)
On-State Resistance (Rds(on)) @ Vgs=4.5V — [DATA_NEEDED: Rds(on) at 4.5V]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) typical]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Reverse Recovery Charge (Qrr) — [DATA_NEEDED: Qrr]
Technology Family — OptiMOS 30V
Configuration — Single

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