IAUC120N06S5L032ATMA1 vs IPD090N03LGATMA1 Comparación
Comparación detallada lado a lado de IAUC120N06S5L032ATMA1 por Infineon y IPD090N03LGATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L032ATMA1 ✓ Activo
Comparación de especificaciones
| Parámetro | IAUC120N06S5L032ATMA1 | IPD090N03LGATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,82 | $0,34 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 (60 V) | — |
| Tipo de transistor | N-Channel, Enhancement Mode | — |
| Drain-to-Source Voltage (V_DS) | 60 V | — |
| Continuous Drain Current (I_D, T_j) | 120 A | — |
| R_DS(on) Max (V_GS = 10 V) | 3.2 mOhm | — |
| Power Dissipation (P_D, T_C = 25 C) | 94 W | — |
| Encapsulado | PG-TDSON-8-34 (5x6 mm) | PG-TO252-3-11 (DPAK) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55 C to +175 C (T_j) | -55C to +175C (junction) |
| Technology | OptiMOS 5 Trench | — |
| AEC-Q101 Qualified | Yes | — |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | [DATA_NEEDED: MSL rating] | 1 (unlimited) |
| Gate Threshold Voltage V_GS(th) | [DATA_NEEDED: V_GS(th) typical and min/max] | — |
| Total Gate Charge Q_G | [DATA_NEEDED: Q_G total at V_GS=10V] | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (Vdss) | — | 30 V |
| Continuous Drain Current (Id) @ Tc=25C | — | 40 A |
| Continuous Drain Current (Id) @ Tc=100C | — | [DATA_NEEDED: Id at 100C] |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed Id] |
| Maximum Power Dissipation (Pd) @ Tc=25C | — | 42 W |
| On-State Resistance (Rds(on)) @ Vgs=10V, Id=30A | — | 9 mOhm (typical) |
| On-State Resistance (Rds(on)) @ Vgs=4.5V | — | [DATA_NEEDED: Rds(on) at 4.5V] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Reverse Recovery Charge (Qrr) | — | [DATA_NEEDED: Qrr] |
| Technology Family | — | OptiMOS 30V |
| Configuration | — | Single |