IAUC120N06S5N011ATMA1 vs IAUC120N06S5L011ATMA1 Vergleich
Detaillierter Direktvergleich von IAUC120N06S5N011ATMA1 von Infineon und IAUC120N06S5L011ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC120N06S5N011ATMA1 - 60V 1.1mΩ OptiMOS-5 N-Ch MOSFET | Infineon
IAUC120N06S5N011ATMA1 ✓ AktivInfineon
IAUC120N06S5L011ATMA1 - 60V 1.1mOhm 310A OptiMOS 5 MOSFET | Infineon
IAUC120N06S5L011ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUC120N06S5N011ATMA1 | IAUC120N06S5L011ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,62 | $2,10 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-5 | OptiMOS 5 60 V (S5 generation) |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (Vdss) | 60 V | — |
| Continuous Drain Current (Id) | 120 A (Tc=25°C, Vgs=10V) | — |
| Pulsed Drain Current (Idm) | 310 A (Tj) | — |
| On-Resistance Rds(on) max | 1.1 mΩ at Vgs=10 V | — |
| Gate-Source Voltage (Vgs) max | ±20 V | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total value] | — |
| Power Dissipation (Pd) | 188 W (Tc=25°C) | — |
| Betriebstemperaturbereich | -55°C to +175°C (Tj) | — |
| Gehäuse | PG-TDSON-8-53 (SSO8 5x6 mm) | PG-TDSON-8-53 (TDSON-8 FL, 5 mm × 6 mm) |
| Montageart | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| RoHS Compliance | Compliant | — |
| MSL-Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Drain-Source Voltage (V_DS) | — | 60 V |
| Gate-Source Voltage (V_GS) | — | [DATA_NEEDED: max V_GS rating] |
| Continuous Drain Current (I_D) | — | 310 A (Tj), 120 A marketing |
| R_DS(on) max | — | [DATA_NEEDED: R_DS(on) at V_GS = 4.5 V] |
| Power Dissipation (P_D) | — | 188 W at T_C = 25 °C |
| Betriebs-Sperrschichttemperatur | — | -55 °C to +175 °C |
| RoHS-Status | — | Compliant |
| Avalanche Energy Rated | — | Yes (EAS) |