IAUC120N06S5N011ATMA1 vs IAUC120N06S5L011ATMA1 Comparison
Detailed side-by-side comparison of IAUC120N06S5N011ATMA1 by Infineon and IAUC120N06S5L011ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N06S5N011ATMA1 - 60V 1.1mΞ© OptiMOS-5 N-Ch MOSFET | Infineon
IAUC120N06S5N011ATMA1 β ActiveInfineon
IAUC120N06S5L011ATMA1
IAUC120N06S5L011ATMA1 - 60V 1.1mOhm 310A OptiMOS 5 MOSFET | Infineon
IAUC120N06S5L011ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC120N06S5N011ATMA1 | IAUC120N06S5L011ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.62 | $2.10 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-5 | OptiMOS 5 60 V (S5 generation) |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (Vdss) | 60 V | β |
| Continuous Drain Current (Id) | 120 A (Tc=25Β°C, Vgs=10V) | β |
| Pulsed Drain Current (Idm) | 310 A (Tj) | β |
| On-Resistance Rds(on) max | 1.1 mΞ© at Vgs=10 V | β |
| Gate-Source Voltage (Vgs) max | Β±20 V | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total value] | β |
| Power Dissipation (Pd) | 188 W (Tc=25Β°C) | β |
| Operating Temperature Range | -55Β°C to +175Β°C (Tj) | β |
| Package | PG-TDSON-8-53 (SSO8 5x6 mm) | PG-TDSON-8-53 (TDSON-8 FL, 5 mm Γ 6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| RoHS Compliance | Compliant | β |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Drain-Source Voltage (V_DS) | β | 60 V |
| Gate-Source Voltage (V_GS) | β | [DATA_NEEDED: max V_GS rating] |
| Continuous Drain Current (I_D) | β | 310 A (Tj), 120 A marketing |
| R_DS(on) max | β | [DATA_NEEDED: R_DS(on) at V_GS = 4.5 V] |
| Power Dissipation (P_D) | β | 188 W at T_C = 25 Β°C |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| RoHS Status | β | Compliant |
| Avalanche Energy Rated | β | Yes (EAS) |