IAUC120N06S5N011ATMA1 vs ISC011N04NM7VATMA1 Vergleich
Detaillierter Direktvergleich von IAUC120N06S5N011ATMA1 von Infineon und ISC011N04NM7VATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC120N06S5N011ATMA1 - 60V 1.1mΩ OptiMOS-5 N-Ch MOSFET | Infineon
IAUC120N06S5N011ATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IAUC120N06S5N011ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,62 | $0,41 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-5 | OptiMOS 7 Power-Transistor |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (Vdss) | 60 V | — |
| Continuous Drain Current (Id) | 120 A (Tc=25°C, Vgs=10V) | — |
| Pulsed Drain Current (Idm) | 310 A (Tj) | — |
| On-Resistance Rds(on) max | 1.1 mΩ at Vgs=10 V | — |
| Gate-Source Voltage (Vgs) max | ±20 V | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total value] | — |
| Power Dissipation (Pd) | 188 W (Tc=25°C) | — |
| Betriebstemperaturbereich | -55°C to +175°C (Tj) | -55 °C to +175 °C (TJ) |
| Gehäuse | PG-TDSON-8-53 (SSO8 5x6 mm) | PG-TDSON-8 (source-down) |
| Montageart | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS Compliance | Compliant | Compliant (per Infineon product page) |
| MSL-Level | 1 (per JEDEC J-STD-020) | MSL 1 (per JEDEC J-STD-020) |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TA=25°C | — | 38 A |
| Continuous Drain Current (ID) at TC | — | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.1 mΩ |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 136 W |
| Gate Threshold Voltage (Vth) | — | Up to 3.2 V |
| Technology | — | Trench MOSFET, silicon |
| Short-Circuit Withstand | — | Yes (current-limited) |