IAUC120N06S5N011ATMA1 vs ISC011N04NM7VATMA1 Comparison
Detailed side-by-side comparison of IAUC120N06S5N011ATMA1 by Infineon and ISC011N04NM7VATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N06S5N011ATMA1 - 60V 1.1mΞ© OptiMOS-5 N-Ch MOSFET | Infineon
IAUC120N06S5N011ATMA1 β ActiveInfineon
ISC011N04NM7VATMA1
ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon
ISC011N04NM7VATMA1 β ActiveSpecification Comparison
| Parameter | IAUC120N06S5N011ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.62 | $0.41 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-5 | OptiMOS 7 Power-Transistor |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (Vdss) | 60 V | β |
| Continuous Drain Current (Id) | 120 A (Tc=25Β°C, Vgs=10V) | β |
| Pulsed Drain Current (Idm) | 310 A (Tj) | β |
| On-Resistance Rds(on) max | 1.1 mΞ© at Vgs=10 V | β |
| Gate-Source Voltage (Vgs) max | Β±20 V | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total value] | β |
| Power Dissipation (Pd) | 188 W (Tc=25Β°C) | β |
| Operating Temperature Range | -55Β°C to +175Β°C (Tj) | -55 Β°C to +175 Β°C (TJ) |
| Package | PG-TDSON-8-53 (SSO8 5x6 mm) | PG-TDSON-8 (source-down) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | β |
| RoHS Compliance | Compliant | Compliant (per Infineon product page) |
| MSL Level | 1 (per JEDEC J-STD-020) | MSL 1 (per JEDEC J-STD-020) |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at TA=25Β°C | β | 38 A |
| Continuous Drain Current (ID) at TC | β | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | β | 1.1 mΞ© |
| Power Dissipation (TA) | β | 3 W |
| Power Dissipation (TC) | β | 136 W |
| Gate Threshold Voltage (Vth) | β | Up to 3.2 V |
| Technology | β | Trench MOSFET, silicon |
| Short-Circuit Withstand | β | Yes (current-limited) |