IAUC120N06S5N032ATMA1 vs IAUC120N06S5L032ATMA1 Vergleich
Detaillierter Direktvergleich von IAUC120N06S5N032ATMA1 von Infineon und IAUC120N06S5L032ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC120N06S5N032ATMA1 - 60V 120A OptiMOS-5 N-MOSFET | Infineon
IAUC120N06S5N032ATMA1 ✓ AktivInfineon
IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L032ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUC120N06S5N032ATMA1 | IAUC120N06S5L032ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,61 | $0,82 |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TC=25C | 120 A | — |
| Power Dissipation (PD) at TC=25C | 94 W | — |
| On-Resistance RDS(on) max at VGS=10V | 3.2 mOhm | — |
| Gate Charge (Qg) typ | 47 nC | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Technology | OptiMOS-5 N-Channel | OptiMOS 5 Trench |
| Betriebstemperaturbereich | -55C to +175C (Tj) | -55 C to +175 C (T_j) |
| Gehäuse | PG-TDSON-8-34 (SSO8 5x6 mm) | PG-TDSON-8-34 (5x6 mm) |
| Montageart | Surface Mount (Tape and Reel) | Surface Mount |
| Pin-Anzahl | 8 | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr] | — |
| Gate Resistance (Rg) | [DATA_NEEDED: Rg] | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | MSL 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 (60 V) |
| Transistortyp | — | N-Channel, Enhancement Mode |
| Drain-to-Source Voltage (V_DS) | — | 60 V |
| Continuous Drain Current (I_D, T_j) | — | 120 A |
| R_DS(on) Max (V_GS = 10 V) | — | 3.2 mOhm |
| Power Dissipation (P_D, T_C = 25 C) | — | 94 W |
| AEC-Q101 Qualified | — | Yes |
| Gate Threshold Voltage V_GS(th) | — | [DATA_NEEDED: V_GS(th) typical and min/max] |
| Total Gate Charge Q_G | — | [DATA_NEEDED: Q_G total at V_GS=10V] |