IAUC120N06S5N032ATMA1 vs IAUC120N06S5L032ATMA1 Сравнение
Подробное сравнение бок о бок IAUC120N06S5N032ATMA1 от Infineon и IAUC120N06S5L032ATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IAUC120N06S5N032ATMA1 - 60V 120A OptiMOS-5 N-MOSFET | Infineon
IAUC120N06S5N032ATMA1 ✓ АктивенInfineon
IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L032ATMA1 ✓ АктивенСравнение характеристик
| Параметр | IAUC120N06S5N032ATMA1 | IAUC120N06S5L032ATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,61 | $0,82 |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TC=25C | 120 A | — |
| Power Dissipation (PD) at TC=25C | 94 W | — |
| On-Resistance RDS(on) max at VGS=10V | 3.2 mOhm | — |
| Gate Charge (Qg) typ | 47 nC | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Technology | OptiMOS-5 N-Channel | OptiMOS 5 Trench |
| Диапазон рабочих температур | -55C to +175C (Tj) | -55 C to +175 C (T_j) |
| Корпус | PG-TDSON-8-34 (SSO8 5x6 mm) | PG-TDSON-8-34 (5x6 mm) |
| Тип монтажа | Surface Mount (Tape and Reel) | Surface Mount |
| Число выводов | 8 | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr] | — |
| Gate Resistance (Rg) | [DATA_NEEDED: Rg] | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Статус RoHS | Compliant | Compliant |
| Уровень MSL | MSL 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 (60 V) |
| Тип транзистора | — | N-Channel, Enhancement Mode |
| Drain-to-Source Voltage (V_DS) | — | 60 V |
| Continuous Drain Current (I_D, T_j) | — | 120 A |
| R_DS(on) Max (V_GS = 10 V) | — | 3.2 mOhm |
| Power Dissipation (P_D, T_C = 25 C) | — | 94 W |
| AEC-Q101 Qualified | — | Yes |
| Gate Threshold Voltage V_GS(th) | — | [DATA_NEEDED: V_GS(th) typical and min/max] |
| Total Gate Charge Q_G | — | [DATA_NEEDED: Q_G total at V_GS=10V] |