IAUC41N06S5N102ATMA1 vs IAUC120N06S5L015ATMA1 Vergleich

Detaillierter Direktvergleich von IAUC41N06S5N102ATMA1 von Infineon und IAUC120N06S5L015ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IAUC120N06S5L015ATMA1 IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter IAUC41N06S5N102ATMA1 IAUC120N06S5L015ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,58 $0,92
Manufacturer Infineon Technologies —
Part Family OptiMOS 5 Power-Transistor —
Transistortyp N-Channel MOSFET —
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID, Tc) 47 A (Tj) —
Power Dissipation (PD, Tc=25C) 42 W 167 W
On-Resistance (RDS(on)) 10.2 mΩ at VGS=10 V, ID=20 A —
Gate-Source Threshold (VGS(th)) 3.4 V (typical) —
Total Gate Charge (QG) 12.5 nC —
Gehäuse PG-TDSON-8-33 (SSO8) Surface Mount PG-TDSON-8-43 (Surface Mount)
Betriebstemperaturbereich -55C to +175C (junction) -55C to +175C (Tj)
Montageart Surface Mount Surface Mount (exposed pad)
Automotive Qualification AEC-Q101 (per Infineon automotive MOSFET family) AEC-Q101 qualified
RoHS-Status Compliant Compliant
Channel Polarity N-Channel (single) —
Technology — N-Channel MOSFET (OptiMOS 5)
Continuous Drain Current (ID, Tc=25C) — 235 A
On-Resistance RDS(on) max (VGS=10 V) — 1.5 mΩ
Gate Charge (Qg, typ) — 88 nC
Gate-Source Voltage (VGS) max — ±20 V
MSL-Level — [DATA_NEEDED: MSL level]
Drain-Source On-State Resistance Test Conditions — VGS = 10 V, ID = 50 A
Typical Application — Automotive DC-DC, battery switches, motor drives

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern