IAUC41N06S5N102ATMA1 vs ISC015N06NM5ATMA1 Vergleich
Detaillierter Direktvergleich von IAUC41N06S5N102ATMA1 von Infineon und ISC015N06NM5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC41N06S5N102ATMA1 - 60V 47A 10.2mΩ OptiMOS 5 N-FET | Infineon
IAUC41N06S5N102ATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IAUC41N06S5N102ATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,58 | $0,62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 5 Power-Transistor | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, Tc) | 47 A (Tj) | — |
| Power Dissipation (PD, Tc=25C) | 42 W | — |
| On-Resistance (RDS(on)) | 10.2 mΩ at VGS=10 V, ID=20 A | — |
| Gate-Source Threshold (VGS(th)) | 3.4 V (typical) | — |
| Total Gate Charge (QG) | 12.5 nC | — |
| Gehäuse | PG-TDSON-8-33 (SSO8) Surface Mount | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Betriebstemperaturbereich | -55C to +175C (junction) | -55 C to +175 C |
| Montageart | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 (per Infineon automotive MOSFET family) | — |
| RoHS-Status | Compliant | Compliant |
| Channel Polarity | N-Channel (single) | — |
| Product Family | — | OptiMOS 5 |
| Polarity / Channel Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TA=25C | — | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | — | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | — | 1.5 mOhm |
| Total Power Dissipation (TA) | — | 3 W |
| Total Power Dissipation (TC) | — | 188 W |
| Technology | — | Trench MOSFET (OptiMOS 5) |
| MSL (Moisture Sensitivity Level) | — | 1 |