IAUC50N08S5L096ATMA1 vs BSC265N10LSFGATMA1 Vergleich
Detaillierter Direktvergleich von IAUC50N08S5L096ATMA1 von Infineon und BSC265N10LSFGATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSC265N10LSFGATMA1 - 100V 40A N-Channel OptiMOS 2 MOSFET | Infineon
BSC265N10LSFGATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUC50N08S5L096ATMA1 | BSC265N10LSFGATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,98 | $0,72 |
| Manufacturer | Infineon Technologies | — |
| Product Series | OptiMOS 5 | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 80 V | 100 V |
| Continuous Drain Current (ID) | 50 A (Tc) | — |
| Pulsed Drain Current (IDM) | 200 A | — |
| On-Resistance (RDS(on)) | 9.6 mΩ max @ VGS=10V, ID=25A | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Power Dissipation (PD) | 60 W (Tc) | — |
| Betriebstemperaturbereich | -55°C to +175°C | -55 C to +150 C (junction) |
| Gehäuse | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8-1 (TDSON-8) |
| Montageart | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| MSL-Level | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| Continuous Drain Current (ID, Tc) | — | 40 A |
| Continuous Drain Current (ID, Ta) | — | 6.5 A |
| Power Dissipation (PD, Tc) | — | 78 W |
| Technology | — | OptiMOS 2 (TrenchFET) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min] |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total at VGS=10V] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss typical] |
| Avalanche Rated | — | Yes |
| Series | — | OptiMOS 2 |