IAUC60N04S6L039ATMA1 vs BSC039N06NSATMA1 Vergleich
Detaillierter Direktvergleich von IAUC60N04S6L039ATMA1 von Infineon und BSC039N06NSATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IAUC60N04S6L039ATMA1 | BSC039N06NSATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,72 | $0,46 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 6 (trench) | OptiMOS 5 (TrenchFET-style) |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, T_C=25C) | 60 A | — |
| Pulsed Drain Current (I_DM) | 240 A | — |
| R_DS(on) max @ V_GS=10V | 3.9 milliohm | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Q_G) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (P_D) | 42 W | — |
| Betriebs-Sperrschichttemperatur | -55C to +175C | -55C to +150C |
| Gehäuse | PG-TDSON-8 (SSO8) 5x6 mm | PG-TDSON-8-6 (TDSON EP, 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS-Status | Compliant | Compliant |
| Avalanche Rated | Yes (100% avalanche tested) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TA | — | 19 A |
| Continuous Drain Current (ID) at TC | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulsed value at TC] |
| On-Resistance RDS(on) max at VGS=10V | — | 3.9 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| Power Dissipation at TA (PD) | — | 2.5 W |
| Power Dissipation at TC (PD) | — | 69 W |
| Anzahl der Pins | — | 8 |
| Gate Drive Voltage (VGS) | — | ±20 V max |