IAUC60N04S6L039ATMA1 vs BSC039N06NSATMA1 Comparaison
Comparaison détaillée côte à côte de IAUC60N04S6L039ATMA1 par Infineon et BSC039N06NSATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IAUC60N04S6L039ATMA1 | BSC039N06NSATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,72 | $0,46 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 6 (trench) | OptiMOS 5 (TrenchFET-style) |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, T_C=25C) | 60 A | — |
| Pulsed Drain Current (I_DM) | 240 A | — |
| R_DS(on) max @ V_GS=10V | 3.9 milliohm | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Q_G) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (P_D) | 42 W | — |
| Température de jonction en fonctionnement | -55C to +175C | -55C to +150C |
| Boîtier | PG-TDSON-8 (SSO8) 5x6 mm | PG-TDSON-8-6 (TDSON EP, 5x6 mm) |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Automotive Qualification | AEC-Q101 qualified | — |
| Statut RoHS | Compliant | Compliant |
| Avalanche Rated | Yes (100% avalanche tested) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 |
| Type de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TA | — | 19 A |
| Continuous Drain Current (ID) at TC | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulsed value at TC] |
| On-Resistance RDS(on) max at VGS=10V | — | 3.9 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| Power Dissipation at TA (PD) | — | 2.5 W |
| Power Dissipation at TC (PD) | — | 69 W |
| Nombre de broches | — | 8 |
| Gate Drive Voltage (VGS) | — | ±20 V max |