IAUC60N04S6N031HATMA1 vs IAUCN04S7N012ATMA1 Vergleich

Detaillierter Direktvergleich von IAUC60N04S6N031HATMA1 von Infineon und IAUCN04S7N012ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IAUC60N04S6N031HATMA1 IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon

IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon

IAUC60N04S6N031HATMA1 ✓ Aktiv
Infineon
IAUCN04S7N012ATMA1 IAUCN04S7N012ATMA1 - 40V 1.2mΩ 120A N-Ch MOSFET | Infineon

IAUCN04S7N012ATMA1 - 40V 1.2mΩ 120A N-Ch MOSFET | Infineon

IAUCN04S7N012ATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter IAUC60N04S6N031HATMA1 IAUCN04S7N012ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,95 $1,18
Manufacturer Infineon Technologies —
Part Family IAUC (Integrated Automotive Half-Bridge) —
Process Technology OptiMOS 6 40V —
Configuration Half-Bridge (2 N-Channel MOSFETs) —
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D, Tj) 60 A —
Power Dissipation (P_D, Tc=25C) 75 W —
R_DS(on) at VGS=10V 3.1 mΩ —
Gate-Source Voltage (V_GS) max [DATA_NEEDED: V_GS max rating] —
Betriebstemperaturbereich -55 °C to +175 °C (Tj) -55 °C to +175 °C [DATA_NEEDED: junction temperature max from datasheet]
Gehäuse PG-TDSON-8-56 (5 mm x 6 mm) PG-TDSON-8-34 (8-PowerTDFN)
Montageart Surface Mount Surface Mount
Pin-Anzahl 8 —
Automotive Qualification AEC-Q101 —
RoHS-Status Compliant Compliant
MSL-Level [DATA_NEEDED: MSL rating] 1
Transistortyp — N-Channel MOSFET
Technology — OptiMOS-7 (trench)
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at TC=25°C — 120 A
On-State Resistance RDS(on) max at VGS=10V — 1.2 mΩ
On-State Resistance RDS(on) max at VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS absolute max]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Transistor Grade — Automotive (AEC-Q101)
Verlustleistung (Ptot) — [DATA_NEEDED: Ptot at TC=25°C]
Thermal Resistance RθJA — [DATA_NEEDED: RθJA on JEDEC PCB]
Halogenfrei — Yes
Polarity — N-Channel

Datenblätter & Ressourcen

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