IAUC60N04S6N044ATMA1 vs BSZ024N04LS6ATMA1 Vergleich
Detaillierter Direktvergleich von IAUC60N04S6N044ATMA1 von Infineon und BSZ024N04LS6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC60N04S6N044ATMA1 - 40V 4.4mΩ 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6N044ATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IAUC60N04S6N044ATMA1 | BSZ024N04LS6ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,98 | $0,46 |
| Technology | OptiMOS-6 N-channel trench MOSFET | OptiMOS 6 (shielded-gate trench) |
| Drain-Source Voltage (V_DS) | 40 V | 40 V |
| Gate-Source Voltage (V_GS) | [DATA_NEEDED: max V_GS rating] | — |
| Continuous Drain Current (I_D) at Tc=25°C | 60 A | — |
| Continuous Drain Current (I_D) at Tc=100°C | [DATA_NEEDED: pulsed/current derated value] | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | 130 A |
| On-Resistance R_DS(on) max @ V_GS=10V | 4.4 mΩ | — |
| On-Resistance R_DS(on) max @ V_GS=4.5V | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] | — |
| Total Gate Charge (Q_g) | [DATA_NEEDED: typical gate charge] | — |
| Power Dissipation (P_D) at Tc=25°C | 42 W | — |
| Betriebs-Sperrschichttemperatur | -55°C to +175°C | -55°C to +175°C |
| Gehäuse | PG-TDSON-8 (5x6 mm) with exposed pad | PG-TSDSON-8-FL (3.3 mm x 3.3 mm) |
| Montageart | Surface Mount | Surface Mount, top-side drain pad |
| MSL-Level | 1 (unlimited) | 1 (per JEDEC J-STD-020) |
| Automotive Qualification | AEC-Q101 qualified (IAUC prefix) | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / [DATA_NEEDED: halogen-free status] | — |
| Transistortyp | — | N-Channel MOSFET |
| Continuous Drain Current (I_D, Ta) | — | 24 A |
| Continuous Drain Current (I_D, Tc) | — | 40 A |
| R_DS(on) Max @ V_GS=10V | — | 2.4 mΩ |
| R_DS(on) Max @ V_GS=4.5V | — | [DATA_NEEDED: R_DS(on) at 4.5V] |
| Gate Threshold Voltage (V_GS(th)) | — | 2.3 V (typical) |
| Total Gate Charge (Q_g) @ V_GS=10V | — | 25 nC |
| Input Capacitance (C_iss) | — | 1.8 nF |
| Output Capacitance (C_oss) | — | 19 pF |
| Power Dissipation (P_D, Ta) | — | 2.5 W |
| Power Dissipation (P_D, Tc) | — | 75 W |