IAUC60N04S6N044ATMA1 vs BSZ024N04LS6ATMA1 비교

다음의 상세 나란히 비교: IAUC60N04S6N044ATMA1 제조: Infineon 및 BSZ024N04LS6ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
BSZ024N04LS6ATMA1 BSZ024N04LS6ATMA1 - 40V 24A OptiMOS 6 N-MOSFET | Infineon

BSZ024N04LS6ATMA1 - 40V 24A OptiMOS 6 N-MOSFET | Infineon

BSZ024N04LS6ATMA1 ✓ 활성

사양 비교

파라미터 IAUC60N04S6N044ATMA1 BSZ024N04LS6ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.98 $0.46
Technology OptiMOS-6 N-channel trench MOSFET OptiMOS 6 (shielded-gate trench)
Drain-Source Voltage (V_DS) 40 V 40 V
Gate-Source Voltage (V_GS) [DATA_NEEDED: max V_GS rating] —
Continuous Drain Current (I_D) at Tc=25°C 60 A —
Continuous Drain Current (I_D) at Tc=100°C [DATA_NEEDED: pulsed/current derated value] —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current] 130 A
On-Resistance R_DS(on) max @ V_GS=10V 4.4 mΩ —
On-Resistance R_DS(on) max @ V_GS=4.5V [DATA_NEEDED: R_DS(on) at V_GS=4.5V] —
Total Gate Charge (Q_g) [DATA_NEEDED: typical gate charge] —
Power Dissipation (P_D) at Tc=25°C 42 W —
동작 접합 온도 -55°C to +175°C -55°C to +175°C
패키지 PG-TDSON-8 (5x6 mm) with exposed pad PG-TSDSON-8-FL (3.3 mm x 3.3 mm)
실장 유형 Surface Mount Surface Mount, top-side drain pad
MSL 레벨 1 (unlimited) 1 (per JEDEC J-STD-020)
Automotive Qualification AEC-Q101 qualified (IAUC prefix) —
RoHS 상태 Compliant Compliant
Lead-Free / Halogen-Free Yes / [DATA_NEEDED: halogen-free status] —
트랜지스터 유형 — N-Channel MOSFET
Continuous Drain Current (I_D, Ta) — 24 A
Continuous Drain Current (I_D, Tc) — 40 A
R_DS(on) Max @ V_GS=10V — 2.4 mΩ
R_DS(on) Max @ V_GS=4.5V — [DATA_NEEDED: R_DS(on) at 4.5V]
Gate Threshold Voltage (V_GS(th)) — 2.3 V (typical)
Total Gate Charge (Q_g) @ V_GS=10V — 25 nC
Input Capacitance (C_iss) — 1.8 nF
Output Capacitance (C_oss) — 19 pF
Power Dissipation (P_D, Ta) — 2.5 W
Power Dissipation (P_D, Tc) — 75 W

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