IAUC60N04S6N044ATMA1 vs IAUC100N04S6L020ATMA1 Vergleich
Detaillierter Direktvergleich von IAUC60N04S6N044ATMA1 von Infineon und IAUC100N04S6L020ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC60N04S6N044ATMA1 - 40V 4.4mΩ 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6N044ATMA1 ✓ AktivInfineon
IAUC100N04S6L020ATMA1 - 40V 100A 2mΩ OptiMOS 6 MOSFET | Infineon
IAUC100N04S6L020ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUC60N04S6N044ATMA1 | IAUC100N04S6L020ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,98 | $0,86 |
| Technology | OptiMOS-6 N-channel trench MOSFET | OptiMOS 6 |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Gate-Source Voltage (V_GS) | [DATA_NEEDED: max V_GS rating] | — |
| Continuous Drain Current (I_D) at Tc=25°C | 60 A | — |
| Continuous Drain Current (I_D) at Tc=100°C | [DATA_NEEDED: pulsed/current derated value] | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance R_DS(on) max @ V_GS=10V | 4.4 mΩ | — |
| On-Resistance R_DS(on) max @ V_GS=4.5V | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] | — |
| Total Gate Charge (Q_g) | [DATA_NEEDED: typical gate charge] | — |
| Power Dissipation (P_D) at Tc=25°C | 42 W | — |
| Betriebs-Sperrschichttemperatur | -55°C to +175°C | — |
| Gehäuse | PG-TDSON-8 (5x6 mm) with exposed pad | PG-TDSON-8 (SS08, 5x6 mm leadless) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 (unlimited) | — |
| Automotive Qualification | AEC-Q101 qualified (IAUC prefix) | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / [DATA_NEEDED: halogen-free status] | — |
| FET Type | — | N-Channel |
| Drain-Source Breakdown Voltage V(BR)DSS | — | 40 V |
| Continuous Drain Current (Tc) | — | 100 A |
| Power Dissipation (Tc) | — | 75 W |
| RDS(on) Maximum @ VGS=10V, ID=50A | — | 2.04 mΩ |
| RDS(on) Typical | — | 2.0 mΩ |
| Gate-Source Voltage VGS (max) | — | ±20 V |
| Gate Threshold Voltage VGS(th) Typical | — | 2.0 V |
| Betriebstemperaturbereich | — | -55 °C to +175 °C (TJ) |
| Qualification | — | Automotive grade |
| Packaging | — | Tape & Reel (TMA1) |