IAUC60N04S6N044ATMA1 vs IAUC100N04S6L020ATMA1 对比

详细并排对比 IAUC60N04S6N044ATMA1 出自 Infineon 和 IAUC100N04S6L020ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC60N04S6N044ATMA1 IAUC60N04S6N044ATMA1 - 40V 4.4mΩ 60A OptiMOS 6 MOSFET | Infineon

IAUC60N04S6N044ATMA1 - 40V 4.4mΩ 60A OptiMOS 6 MOSFET | Infineon

IAUC60N04S6N044ATMA1 ✓ 量产中
Infineon
IAUC100N04S6L020ATMA1 IAUC100N04S6L020ATMA1 - 40V 100A 2mΩ OptiMOS 6 MOSFET | Infineon

IAUC100N04S6L020ATMA1 - 40V 100A 2mΩ OptiMOS 6 MOSFET | Infineon

IAUC100N04S6L020ATMA1 ✓ 量产中

规格对比

参数 IAUC60N04S6N044ATMA1 IAUC100N04S6L020ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.98 $0.86
Technology OptiMOS-6 N-channel trench MOSFET OptiMOS 6
Drain-Source Voltage (V_DS) 40 V —
Gate-Source Voltage (V_GS) [DATA_NEEDED: max V_GS rating] —
Continuous Drain Current (I_D) at Tc=25°C 60 A —
Continuous Drain Current (I_D) at Tc=100°C [DATA_NEEDED: pulsed/current derated value] —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current] —
On-Resistance R_DS(on) max @ V_GS=10V 4.4 mΩ —
On-Resistance R_DS(on) max @ V_GS=4.5V [DATA_NEEDED: R_DS(on) at V_GS=4.5V] —
Total Gate Charge (Q_g) [DATA_NEEDED: typical gate charge] —
Power Dissipation (P_D) at Tc=25°C 42 W —
工作结温 -55°C to +175°C —
封装 PG-TDSON-8 (5x6 mm) with exposed pad PG-TDSON-8 (SS08, 5x6 mm leadless)
安装类型 Surface Mount Surface Mount
MSL 等级 1 (unlimited) —
Automotive Qualification AEC-Q101 qualified (IAUC prefix) —
RoHS 状态 Compliant Compliant
Lead-Free / Halogen-Free Yes / [DATA_NEEDED: halogen-free status] —
FET Type — N-Channel
Drain-Source Breakdown Voltage V(BR)DSS — 40 V
Continuous Drain Current (Tc) — 100 A
Power Dissipation (Tc) — 75 W
RDS(on) Maximum @ VGS=10V, ID=50A — 2.04 mΩ
RDS(on) Typical — 2.0 mΩ
Gate-Source Voltage VGS (max) — ±20 V
Gate Threshold Voltage VGS(th) Typical — 2.0 V
工作温度范围 — -55 °C to +175 °C (TJ)
Qualification — Automotive grade
Packaging — Tape & Reel (TMA1)

数据手册与资源

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