IAUC60N10S5L110ATMA1 vs IAUC100N04S6N028ATMA1 Vergleich
Detaillierter Direktvergleich von IAUC60N10S5L110ATMA1 von Infineon und IAUC100N04S6N028ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6N028ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUC60N10S5L110ATMA1 | IAUC100N04S6N028ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,66 | $0,42 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™-5 | OptiMOS 6 40V |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V | — |
| Continuous Drain Current (I<sub>D</sub>, Tc) | 60 A | — |
| Power Dissipation (P<sub>D</sub>, Tc) | 88 W | — |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V | 11 mΩ | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 1.2 V | — |
| Gehäuse | PG-TDSON-8-33 (TDSON-8 Single) | PG-TDSON-8 (TDSON-8) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | [DATA_NEEDED: min/max operating temperature] | -55 °C to +175 °C |
| Gate-Source Voltage (V<sub>GS</sub>) Max | [DATA_NEEDED: VGS max rating] | — |
| Total Gate Charge (Q<sub>G</sub>) | [DATA_NEEDED: Qg at specified Vgs] | — |
| Avalanche Energy (E<sub>AS</sub>) | [DATA_NEEDED: single-pulse avalanche energy] | — |
| Lead-Free / RoHS | Yes (RoHS compliant per LCSC listing) | — |
| Packing Code | ATMA1 (Tape & Reel) | — |
| MSL-Level | 1 (per LCSC datasheet snippet) | — |
| Halogenfrei | Yes (per Infineon product classification) | — |
| Customer Info / FGR | J52 (per Infineon product data) | — |
| FET Type | — | N-Channel |
| Technology | — | MOSFET (Metal Oxide) |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D) at T_C=25°C | — | 100 A |
| Pulsed Drain Current (I_DM) | — | 400 A |
| R_DS(on) max @ V_GS=10V | — | 2.8 mΩ (typical) |
| Gate Threshold Voltage (V_GS(th)) | — | 1.5 V to 2.5 V |
| Total Gate Charge (Q_g) | — | [DATA_NEEDED: Q_g in nC] |
| Power Dissipation (P_D) at T_C=25°C | — | 62 W |
| Automotive Qualified | — | Yes |
| RoHS-Status | — | Compliant |