IAUC60N10S5L110ATMA1 vs IAUC100N04S6N028ATMA1 Comparison
Detailed side-by-side comparison of IAUC60N10S5L110ATMA1 by Infineon and IAUC100N04S6N028ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC60N10S5L110ATMA1
IAUC60N10S5L110ATMA1 - 100V 11mΞ© N-Ch OptiMOS 5 | Infineon
IAUC60N10S5L110ATMA1 β ActiveInfineon
IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6N028ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC60N10S5L110ATMA1 | IAUC100N04S6N028ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.66 | $0.42 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOSβ’-5 | OptiMOS 6 40V |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V | β |
| Continuous Drain Current (I<sub>D</sub>, Tc) | 60 A | β |
| Power Dissipation (P<sub>D</sub>, Tc) | 88 W | β |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V | 11 mΞ© | β |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 1.2 V | β |
| Package | PG-TDSON-8-33 (TDSON-8 Single) | PG-TDSON-8 (TDSON-8) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: min/max operating temperature] | -55 Β°C to +175 Β°C |
| Gate-Source Voltage (V<sub>GS</sub>) Max | [DATA_NEEDED: VGS max rating] | β |
| Total Gate Charge (Q<sub>G</sub>) | [DATA_NEEDED: Qg at specified Vgs] | β |
| Avalanche Energy (E<sub>AS</sub>) | [DATA_NEEDED: single-pulse avalanche energy] | β |
| Lead-Free / RoHS | Yes (RoHS compliant per LCSC listing) | β |
| Packing Code | ATMA1 (Tape & Reel) | β |
| MSL Level | 1 (per LCSC datasheet snippet) | β |
| Halogen-Free | Yes (per Infineon product classification) | β |
| Customer Info / FGR | J52 (per Infineon product data) | β |
| FET Type | β | N-Channel |
| Technology | β | MOSFET (Metal Oxide) |
| Drain-Source Voltage (V_DS) | β | 40 V |
| Continuous Drain Current (I_D) at T_C=25Β°C | β | 100 A |
| Pulsed Drain Current (I_DM) | β | 400 A |
| R_DS(on) max @ V_GS=10V | β | 2.8 mΞ© (typical) |
| Gate Threshold Voltage (V_GS(th)) | β | 1.5 V to 2.5 V |
| Total Gate Charge (Q_g) | β | [DATA_NEEDED: Q_g in nC] |
| Power Dissipation (P_D) at T_C=25Β°C | β | 62 W |
| Automotive Qualified | β | Yes |
| RoHS Status | β | Compliant |