IAUC60N10S5L110ATMA1 vs IAUC100N10S5L054ATMA1 Vergleich

Detaillierter Direktvergleich von IAUC60N10S5L110ATMA1 von Infineon und IAUC100N10S5L054ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IAUC60N10S5L110ATMA1 IAUC60N10S5L110ATMA1 - 100V 11mΩ N-Ch OptiMOS 5 | Infineon

IAUC60N10S5L110ATMA1 - 100V 11mΩ N-Ch OptiMOS 5 | Infineon

IAUC60N10S5L110ATMA1 ✓ Aktiv
Infineon
IAUC100N10S5L054ATMA1 IAUC100N10S5L054ATMA1 - 100V 5.4mΩ N-Ch MOSFET | Infineon

IAUC100N10S5L054ATMA1 - 100V 5.4mΩ N-Ch MOSFET | Infineon

IAUC100N10S5L054ATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter IAUC60N10S5L110ATMA1 IAUC100N10S5L054ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,66 $1,92
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS™-5 OptiMOS 5 (IAUC automotive family)
Transistortyp N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (V<sub>DS</sub>) 100 V —
Continuous Drain Current (I<sub>D</sub>, Tc) 60 A —
Power Dissipation (P<sub>D</sub>, Tc) 88 W —
R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V 11 mΩ —
Gate Threshold Voltage (V<sub>GS(th)</sub>) 1.2 V —
Gehäuse PG-TDSON-8-33 (TDSON-8 Single) PG-TDSON-8-34 (surface mount)
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich [DATA_NEEDED: min/max operating temperature] -55°C to +175°C
Gate-Source Voltage (V<sub>GS</sub>) Max [DATA_NEEDED: VGS max rating] —
Total Gate Charge (Q<sub>G</sub>) [DATA_NEEDED: Qg at specified Vgs] —
Avalanche Energy (E<sub>AS</sub>) [DATA_NEEDED: single-pulse avalanche energy] —
Lead-Free / RoHS Yes (RoHS compliant per LCSC listing) —
Packing Code ATMA1 (Tape & Reel) —
MSL-Level 1 (per LCSC datasheet snippet) [DATA_NEEDED: MSL rating]
Halogenfrei Yes (per Infineon product classification) —
Customer Info / FGR J52 (per Infineon product data) —
Drain-to-Source Voltage (V_DS) — 100 V
Gate-to-Source Voltage (V_GS) — [DATA_NEEDED: max V_GS value]
Continuous Drain Current (I_D, Tj) — 101 A
Power Dissipation (P_D, Tc) — 130 W
R_DS(on) max at V_GS=10V — 5.4 mΩ
Qualification — AEC-Q101 (automotive)
Technology — OptiMOS 5 trench
RoHS-Status — Compliant

Datenblätter & Ressourcen

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