IAUCN04S7L028ATMA1 vs IAUCN04S7N015GATMA1 Vergleich
Detaillierter Direktvergleich von IAUCN04S7L028ATMA1 von Infineon und IAUCN04S7N015GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IAUCN04S7L028ATMA1 | IAUCN04S7N015GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,88 | $2,21 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) | 100 A | — |
| On-State Resistance (RDS(on)) max | 2.80 mOhm at VGS=10 V | — |
| On-State Resistance (RDS(on)) | 2.82 mOhm at VGS=10 V (JLCPCB reported) | — |
| Gate-Source Threshold (VGS(th)) | 1.8 V (typ) | — |
| Gate Charge (Qg) | 24 nC at VGS=10 V | — |
| Input Capacitance (Ciss) | 1.578 nF | — |
| Output Capacitance (Coss) | 788 pF | — |
| Reverse Transfer Capacitance (Crss) | 36 pF | — |
| Verlustleistung (Ptot) | 58 W | — |
| Betriebs-Sperrschichttemperatur | -55 C to +175 C | -55C to +175C |
| Gehäuse | PG-TDSON-8-33 (TDSON-8 EP) | PG-THSOG-4-1 (SSO4G 5x6) surface mount |
| Montageart | Surface Mount | Surface Mount (IMS-compatible source-down) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| RoHS-Status | Compliant | Compliant |
| Product Family | — | OptiMOS 7 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D) | — | 165 A (Tc) |
| Power Dissipation (P_D) | — | 96 W (Tc) |
| R_DS(on) max | — | 1.53 mΩ at V_GS=10 V |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS max] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical] |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: total gate charge] |
| MSL-Level | — | 1 (per JEDEC J-STD-020) |