IAUCN04S7L042GATMA1 vs IAUCN04S7N006TATMA1 Vergleich
Detaillierter Direktvergleich von IAUCN04S7L042GATMA1 von Infineon und IAUCN04S7N006TATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
IAUCN04S7L042GATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUCN04S7L042GATMA1 | IAUCN04S7N006TATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,86 | $2,66 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 7 40V | — |
| Technology | Trench N-Channel MOSFET | OptiMOS 7 (shielded-gate trench) |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tj) | 77 A | — |
| Maximum Power Dissipation (PD, Tc) | 50 W | — |
| Gehäuse | PG-THSOG-4 (SSO4G 5x6) leaded surface mount | PG-LHDSO-10-3 (10-LSOP, 5.30 mm width, exposed pad) |
| Montageart | Surface Mount (IMS substrate / FR4 with thermal vias) | Surface Mount |
| Betriebstemperaturbereich | -55C to +175C (Tj) | [DATA_NEEDED: Tj min/max] |
| Polarity / Channel Type | N-Channel enhancement mode | — |
| Automotive Qualified | Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 | [DATA_NEEDED: MSL rating] |
| Packing | Tape & Reel (per -ATMA1 suffix) | — |
| Target Substrate | IMS substrate and legacy FR4 designs | — |
| On-State Resistance RDS(on) | [DATA_NEEDED: RDS(on) max @ VGS=10V] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg @ VGS=10V] | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, T_j) | — | 425 A |
| Power Dissipation (P_D, T_C) | — | 205 W |
| R_DS(on) (typ, V_GS=10V) | — | 0.63 mΩ |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical/min/max] |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: Q_G at V_GS=10V] |
| Automotive Grade | — | Yes (Infineon automotive MOSFET line) |
| Lead-Free | — | Yes |