IAUCN04S7L042GATMA1 vs IAUCN04S7N006TATMA1 对比

详细并排对比 IAUCN04S7L042GATMA1 出自 Infineon 和 IAUCN04S7N006TATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUCN04S7N006TATMA1 IAUCN04S7N006TATMA1 - 40V 425A OptiMOS 7 N-MOSFET | Infineon

IAUCN04S7N006TATMA1 - 40V 425A OptiMOS 7 N-MOSFET | Infineon

IAUCN04S7N006TATMA1 ✓ 量产中

规格对比

参数 IAUCN04S7L042GATMA1 IAUCN04S7N006TATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.86 $2.66
Manufacturer Infineon Technologies —
Product Family OptiMOS 7 40V —
Technology Trench N-Channel MOSFET OptiMOS 7 (shielded-gate trench)
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, Tj) 77 A —
Maximum Power Dissipation (PD, Tc) 50 W —
封装 PG-THSOG-4 (SSO4G 5x6) leaded surface mount PG-LHDSO-10-3 (10-LSOP, 5.30 mm width, exposed pad)
安装类型 Surface Mount (IMS substrate / FR4 with thermal vias) Surface Mount
工作温度范围 -55C to +175C (Tj) [DATA_NEEDED: Tj min/max]
Polarity / Channel Type N-Channel enhancement mode —
Automotive Qualified Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) —
RoHS 状态 Compliant Compliant
MSL 等级 1 [DATA_NEEDED: MSL rating]
Packing Tape & Reel (per -ATMA1 suffix) —
Target Substrate IMS substrate and legacy FR4 designs —
On-State Resistance RDS(on) [DATA_NEEDED: RDS(on) max @ VGS=10V] —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge Qg [DATA_NEEDED: Qg @ VGS=10V] —
Polarity — N-Channel
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D, T_j) — 425 A
Power Dissipation (P_D, T_C) — 205 W
R_DS(on) (typ, V_GS=10V) — 0.63 mΩ
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical/min/max]
Total Gate Charge (Q_G) — [DATA_NEEDED: Q_G at V_GS=10V]
Automotive Grade — Yes (Infineon automotive MOSFET line)
Lead-Free — Yes

数据手册与资源

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