IAUCN04S7L042GATMA1 vs IAUCN04S7N019DATMA1 Vergleich
Detaillierter Direktvergleich von IAUCN04S7L042GATMA1 von Infineon und IAUCN04S7N019DATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
IAUCN04S7L042GATMA1 ✓ AktivInfineon
IAUCN04S7N019DATMA1 - 40V Dual N-Channel MOSFET Array | Infineon
IAUCN04S7N019DATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUCN04S7L042GATMA1 | IAUCN04S7N019DATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,86 | $1,05 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 40V | — |
| Technology | Trench N-Channel MOSFET | OptiMOS 7 40V |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID, Tj) | 77 A | — |
| Maximum Power Dissipation (PD, Tc) | 50 W | — |
| Gehäuse | PG-THSOG-4 (SSO4G 5x6) leaded surface mount | PG-TDSON-8-60 (SuperSO8) |
| Montageart | Surface Mount (IMS substrate / FR4 with thermal vias) | Surface Mount |
| Betriebstemperaturbereich | -55C to +175C (Tj) | — |
| Polarity / Channel Type | N-Channel enhancement mode | — |
| Automotive Qualified | Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 | 1 (per JEDEC J-STD-020, family default) |
| Packing | Tape & Reel (per -ATMA1 suffix) | — |
| Target Substrate | IMS substrate and legacy FR4 designs | — |
| On-State Resistance RDS(on) | [DATA_NEEDED: RDS(on) max @ VGS=10V] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg @ VGS=10V] | — |
| Configuration | — | Dual N-Channel (array) |
| Continuous Drain Current (ID, Tc) | — | 160 A (Tj) |
| Power Dissipation (PD, Tc) | — | 96 W |
| Betriebs-Sperrschichttemperatur | — | -55 C to +175 C |
| Input Capacitance (Ciss, typ.) | — | 1.465 nF |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS max rating] |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at 10V VGS] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typ] |
| Automotive Qualification | — | AEC-Q101 (family) |
| ESD Protection | — | Yes (gate integrated) |