IAUCN04S7L042GATMA1 vs IAUCN04S7N019DATMA1 Сравнение
Подробное сравнение бок о бок IAUCN04S7L042GATMA1 от Infineon и IAUCN04S7N019DATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
IAUCN04S7L042GATMA1 ✓ АктивенInfineon
IAUCN04S7N019DATMA1 - 40V Dual N-Channel MOSFET Array | Infineon
IAUCN04S7N019DATMA1 ✓ АктивенСравнение характеристик
| Параметр | IAUCN04S7L042GATMA1 | IAUCN04S7N019DATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,86 | $1,05 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 40V | — |
| Technology | Trench N-Channel MOSFET | OptiMOS 7 40V |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID, Tj) | 77 A | — |
| Maximum Power Dissipation (PD, Tc) | 50 W | — |
| Корпус | PG-THSOG-4 (SSO4G 5x6) leaded surface mount | PG-TDSON-8-60 (SuperSO8) |
| Тип монтажа | Surface Mount (IMS substrate / FR4 with thermal vias) | Surface Mount |
| Диапазон рабочих температур | -55C to +175C (Tj) | — |
| Polarity / Channel Type | N-Channel enhancement mode | — |
| Automotive Qualified | Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) | — |
| Статус RoHS | Compliant | Compliant |
| Уровень MSL | 1 | 1 (per JEDEC J-STD-020, family default) |
| Packing | Tape & Reel (per -ATMA1 suffix) | — |
| Target Substrate | IMS substrate and legacy FR4 designs | — |
| On-State Resistance RDS(on) | [DATA_NEEDED: RDS(on) max @ VGS=10V] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg @ VGS=10V] | — |
| Configuration | — | Dual N-Channel (array) |
| Continuous Drain Current (ID, Tc) | — | 160 A (Tj) |
| Power Dissipation (PD, Tc) | — | 96 W |
| Рабочая температура перехода | — | -55 C to +175 C |
| Input Capacitance (Ciss, typ.) | — | 1.465 nF |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS max rating] |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at 10V VGS] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typ] |
| Automotive Qualification | — | AEC-Q101 (family) |
| ESD Protection | — | Yes (gate integrated) |