IAUCN04S7N012ATMA1 vs IAUC100N10S5N040ATMA1 Vergleich
Detaillierter Direktvergleich von IAUCN04S7N012ATMA1 von Infineon und IAUC100N10S5N040ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC100N10S5N040ATMA1 - 100V 4mΩ 100A OptiMOS-5 N-MOSFET | Infineon
IAUC100N10S5N040ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUCN04S7N012ATMA1 | IAUC100N10S5N040ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,18 | $1,62 |
| Transistortyp | N-Channel MOSFET | — |
| Technology | OptiMOS-7 (trench) | OptiMOS-5 |
| Drain-Source Voltage (VDS) | 40 V | 100 V |
| Continuous Drain Current (ID) at TC=25°C | 120 A | — |
| On-State Resistance RDS(on) max at VGS=10V | 1.2 mΩ | — |
| On-State Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS absolute max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | [DATA_NEEDED: Qg value] |
| Betriebstemperaturbereich | -55 °C to +175 °C [DATA_NEEDED: junction temperature max from datasheet] | -55C to +175C (junction) |
| Gehäuse | PG-TDSON-8-34 (8-PowerTDFN) | PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount |
| Montageart | Surface Mount | Surface Mount |
| Transistor Grade | Automotive (AEC-Q101) | — |
| Verlustleistung (Ptot) | [DATA_NEEDED: Ptot at TC=25°C] | — |
| Thermal Resistance RθJA | [DATA_NEEDED: RθJA on JEDEC PCB] | — |
| RoHS-Status | Compliant | Compliant |
| Halogenfrei | Yes | — |
| MSL-Level | 1 | MSL1 (up to 260C peak reflow) |
| Polarity | N-Channel | — |
| FET Type | — | N-Channel, Enhancement Mode |
| Continuous Drain Current (ID) @ TC=25C | — | 100 A (package-limited) |
| Pulsed Drain Current (IDM) | — | 400 A |
| RDS(on) max @ VGS=10V | — | 4 mΩ |
| Maximum Power Dissipation (PD) | — | 167 W @ TC=25C |
| Thermal Resistance, Junction-to-Case (RthJC) | — | 0.9 K/W |
| Automotive Qualification | — | AEC-Q100 qualified |
| Avalanche Rating | — | 100% Avalanche tested |
| AOI Compatibility | — | Feasible for Automatic Optical Inspection |