IAUCN04S7N012ATMA1 vs IAUC100N10S5N040ATMA1 비교

다음의 상세 나란히 비교: IAUCN04S7N012ATMA1 제조: Infineon 및 IAUC100N10S5N040ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IAUCN04S7N012ATMA1 IAUCN04S7N012ATMA1 - 40V 1.2mΩ 120A N-Ch MOSFET | Infineon

IAUCN04S7N012ATMA1 - 40V 1.2mΩ 120A N-Ch MOSFET | Infineon

IAUCN04S7N012ATMA1 ✓ 활성

사양 비교

파라미터 IAUCN04S7N012ATMA1 IAUC100N10S5N040ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.18 $1.62
트랜지스터 유형 N-Channel MOSFET —
Technology OptiMOS-7 (trench) OptiMOS-5
Drain-Source Voltage (VDS) 40 V 100 V
Continuous Drain Current (ID) at TC=25°C 120 A —
On-State Resistance RDS(on) max at VGS=10V 1.2 mΩ —
On-State Resistance RDS(on) max at VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS absolute max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] [DATA_NEEDED: Qg value]
동작 온도 범위 -55 °C to +175 °C [DATA_NEEDED: junction temperature max from datasheet] -55C to +175C (junction)
패키지 PG-TDSON-8-34 (8-PowerTDFN) PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount
실장 유형 Surface Mount Surface Mount
Transistor Grade Automotive (AEC-Q101) —
전력 손실 (Ptot) [DATA_NEEDED: Ptot at TC=25°C] —
Thermal Resistance RθJA [DATA_NEEDED: RθJA on JEDEC PCB] —
RoHS 상태 Compliant Compliant
할로겐 프리 Yes —
MSL 레벨 1 MSL1 (up to 260C peak reflow)
Polarity N-Channel —
FET Type — N-Channel, Enhancement Mode
Continuous Drain Current (ID) @ TC=25C — 100 A (package-limited)
Pulsed Drain Current (IDM) — 400 A
RDS(on) max @ VGS=10V — 4 mΩ
Maximum Power Dissipation (PD) — 167 W @ TC=25C
Thermal Resistance, Junction-to-Case (RthJC) — 0.9 K/W
Automotive Qualification — AEC-Q100 qualified
Avalanche Rating — 100% Avalanche tested
AOI Compatibility — Feasible for Automatic Optical Inspection

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