IAUCN04S7N015GATMA1 vs IAUC60N10S5L110ATMA1 Vergleich

Detaillierter Direktvergleich von IAUCN04S7N015GATMA1 von Infineon und IAUC60N10S5L110ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IAUCN04S7N015GATMA1 IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon

IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon

IAUCN04S7N015GATMA1 ✓ Aktiv
Infineon
IAUC60N10S5L110ATMA1 IAUC60N10S5L110ATMA1 - 100V 11mΩ N-Ch OptiMOS 5 | Infineon

IAUC60N10S5L110ATMA1 - 100V 11mΩ N-Ch OptiMOS 5 | Infineon

IAUC60N10S5L110ATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter IAUCN04S7N015GATMA1 IAUC60N10S5L110ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $2,21 $0,66
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 —
Channel Type N-Channel —
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D) 165 A (Tc) —
Power Dissipation (P_D) 96 W (Tc) —
R_DS(on) max 1.53 mΩ at V_GS=10 V —
Gate-Source Voltage (V_GS) max [DATA_NEEDED: V_GS max] —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical] —
Gehäuse PG-THSOG-4-1 (SSO4G 5x6) surface mount PG-TDSON-8-33 (TDSON-8 Single)
Betriebs-Sperrschichttemperatur -55C to +175C —
Automotive Qualification AEC-Q101 qualified —
Total Gate Charge (Q_G) [DATA_NEEDED: total gate charge] —
RoHS-Status Compliant —
Montageart Surface Mount (IMS-compatible source-down) Surface Mount
MSL-Level 1 (per JEDEC J-STD-020) 1 (per LCSC datasheet snippet)
Series — OptiMOS™-5
Transistortyp — N-Channel MOSFET
Drain-Source Voltage (V<sub>DS</sub>) — 100 V
Continuous Drain Current (I<sub>D</sub>, Tc) — 60 A
Power Dissipation (P<sub>D</sub>, Tc) — 88 W
R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V — 11 mΩ
Gate Threshold Voltage (V<sub>GS(th)</sub>) — 1.2 V
Betriebstemperaturbereich — [DATA_NEEDED: min/max operating temperature]
Gate-Source Voltage (V<sub>GS</sub>) Max — [DATA_NEEDED: VGS max rating]
Total Gate Charge (Q<sub>G</sub>) — [DATA_NEEDED: Qg at specified Vgs]
Avalanche Energy (E<sub>AS</sub>) — [DATA_NEEDED: single-pulse avalanche energy]
Lead-Free / RoHS — Yes (RoHS compliant per LCSC listing)
Packing Code — ATMA1 (Tape & Reel)
Halogenfrei — Yes (per Infineon product classification)
Customer Info / FGR — J52 (per Infineon product data)

Datenblätter & Ressourcen

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